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Epitaxial growth of III-nitride comp...

Kangawa, Yoshihiro.

Epitaxial growth of III-nitride compoundscomputational approach /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Epitaxial growth of III-nitride compoundsedited by Takashi Matsuoka, Yoshihiro Kangawa.
Reminder of title:	computational approach /
other author:	Matsuoka, Takashi.
Published:	Cham :Springer International Publishing :2018.
Description:	ix, 223 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Nitrides.
Online resource:	http://dx.doi.org/10.1007/978-3-319-76641-6
ISBN:	9783319766416$q(electronic bk.)

Epitaxial growth of III-nitride compoundscomputational approach /
Epitaxial growth of III-nitride compoundscomputational approach /[electronic resource] :edited by Takashi Matsuoka, Yoshihiro Kangawa. - Cham :Springer International Publishing :2018. - ix, 223 p. :ill., digital ;24 cm. - Springer series in materials science,v.2690933-033X ;. - Springer series in materials science ;v. 62..

Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary.

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

ISBN: 9783319766416$q(electronic bk.)

Standard No.: 10.1007/978-3-319-76641-6doiSubjects--Topical Terms:

234923
Nitrides.

LC Class. No.: TK7871.15.N57 / E658 2018

Dewey Class. No.: 621.38152

Epitaxial growth of III-nitride compoundscomputational approach /
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505 0 $a Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary.
520 $a This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
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