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Electronic states of narrow-gap semi...

Akiba, Kazuto.

Electronic states of narrow-gap semiconductors under multi-extreme conditions

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electronic states of narrow-gap semiconductors under multi-extreme conditionsby Kazuto Akiba.
Author:	Akiba, Kazuto.
Published:	Singapore :Springer Singapore :2019.
Description:	xxiv, 147 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Narrow gap semiconductors.
Online resource:	https://doi.org/10.1007/978-981-13-7107-3
ISBN:	9789811371073$q(electronic bk.)

Electronic states of narrow-gap semiconductors under multi-extreme conditions
Akiba, Kazuto.

Electronic states of narrow-gap semiconductors under multi-extreme conditions[electronic resource] /by Kazuto Akiba. - Singapore :Springer Singapore :2019. - xxiv, 147 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

General Introduction -- Experimental Methods -- Black Phosphorus -- Lead Telluride -- Concluding Remarks.

This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe) The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.

ISBN: 9789811371073$q(electronic bk.)

Standard No.: 10.1007/978-981-13-7107-3doiSubjects--Topical Terms:

185636
Narrow gap semiconductors.

LC Class. No.: QC611.8.N35

Dewey Class. No.: 537.6223

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505 0 $a General Introduction -- Experimental Methods -- Black Phosphorus -- Lead Telluride -- Concluding Remarks.
520 $a This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe) The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.
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