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Compound semiconductor materials and...

Huang, Tongde,

Compound semiconductor materials and devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	Compound semiconductor materials and devicesZhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
Author:	Liu, Zhaojun.
other author:	Huang, Tongde,
Published:	San Rafael, California :Morgan & Claypool Publisher,2016.
Description:	1 online resource (75 p.)
Subject:	Compound semiconductors.
Online resource:	click for full text
ISBN:	9781627058520

Compound semiconductor materials and devices
Liu, Zhaojun.

Compound semiconductor materials and devices[electronic resource] /Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou. - San Rafael, California :Morgan & Claypool Publisher,2016. - 1 online resource (75 p.)

Includes bibliographical references and index.

Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.

ISBN: 9781627058520Subjects--Topical Terms:

262951
Compound semiconductors.

LC Class. No.: TK7871.99.C65

Dewey Class. No.: 621.38152

Compound semiconductor materials and devices
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100 1 $a Liu, Zhaojun. $3 842586
245 1 0 $a Compound semiconductor materials and devices $h [electronic resource] / $c Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
260 $a San Rafael, California : $b Morgan & Claypool Publisher, $c 2016.
300 $a 1 online resource (75 p.)
504 $a Includes bibliographical references and index.
505 0 $a Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.
520 3 $a Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.
650 0 $a Compound semiconductors. $3 262951
650 0 $a Modulation-doped field-effect transistors. $3 200535
700 1 $a Huang, Tongde, $e author. $3 842587
700 1 $a Li, Qiang, $e author. $3 842588
700 1 $a Lu, Xing, $e author. $3 842589
700 1 $a Zou, Xinbo, $e author. $3 842590
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