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Long-term reliability of nanometer VLSI systemsmodeling, analysis and optimization /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Long-term reliability of nanometer VLSI systemsby Sheldon Tan ... [et al.].
Reminder of title:	modeling, analysis and optimization /
other author:	Tan, Sheldon.
Published:	Cham :Springer International Publishing :2019.
Description:	xli, 460 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Nanoelectromechanical systems.
Online resource:	https://doi.org/10.1007/978-3-030-26172-6
ISBN:	9783030261726$q(electronic bk.)

Long-term reliability of nanometer VLSI systemsmodeling, analysis and optimization /
Long-term reliability of nanometer VLSI systemsmodeling, analysis and optimization /[electronic resource] :by Sheldon Tan ... [et al.]. - Cham :Springer International Publishing :2019. - xli, 460 p. :ill. (some col.), digital ;24 cm.

Part I. New physics-based EM analysis and system-level dynamic reliability management -- Chapter 1. Introduction -- Chapter 2. Physics Based EM Modeling -- Chapter 3. Fast EM Stress Evolution Analysis Using Krylov Subspace Method -- Chapter 4. Fast EM Immortatlity Analysis For Multisegment Copper Interconnect Wires -- Chapter 5. Dynamic EM Models For Transient Stress Evolution and Recovery -- Chapter 6. Compact EM Models for Multi-SEgment Interconnect Wires -- Chapter 7. EM Assesment for Power Grid Networks -- Chapter 8. Resource Based EM Modeling for Multi-Crore Microprocessors -- Chapter 9. DRM and Optimization for Real Time Embedded Systems -- Chapter 10. Learning Based DRM and Energy Optimization for Many Core Dark Silicaon Processors -- Chapter 11. Recovery Aware DRM for Near Threshold Dark Silicon Processors -- Chapter 12. Cross-Layer DRM and Optimization For Datacenter Systems -- Part II. Transistor Aging Effects and Reliability -- 13. Introduction -- Chapter 14. Aging AWare Timings Analysis -- Chapter 15. Aging Aware Standard Cell Library Optimization Methods -- Chapter 16. Aging Effects In Sequential Elements -- Chapter 17. Aging Guardband Reduction Through Selective Flip Flop Optimization -- Chapter 18. Workload Aware Static Aging Monitoring and Mitigation of Timing Critical Flip Flops -- Chapter 19. Aging Relaxation at Micro Architecture Level Using Special NOPS -- Chapter 20. Extratime Modelling and Analyis of Transistor Agin at Microarchitecture Level -- Chapter 21. Reducing Processor Wearout By Exploiting The Timing Slack of Instructions.

This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

ISBN: 9783030261726$q(electronic bk.)

Standard No.: 10.1007/978-3-030-26172-6doiSubjects--Topical Terms:

321655
Nanoelectromechanical systems.

LC Class. No.: TK7875

Dewey Class. No.: 620.5

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245 0 0 $a Long-term reliability of nanometer VLSI systems $h [electronic resource] : $b modeling, analysis and optimization / $c by Sheldon Tan ... [et al.].
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300 $a xli, 460 p. : $b ill. (some col.), digital ; $c 24 cm.
505 0 $a Part I. New physics-based EM analysis and system-level dynamic reliability management -- Chapter 1. Introduction -- Chapter 2. Physics Based EM Modeling -- Chapter 3. Fast EM Stress Evolution Analysis Using Krylov Subspace Method -- Chapter 4. Fast EM Immortatlity Analysis For Multisegment Copper Interconnect Wires -- Chapter 5. Dynamic EM Models For Transient Stress Evolution and Recovery -- Chapter 6. Compact EM Models for Multi-SEgment Interconnect Wires -- Chapter 7. EM Assesment for Power Grid Networks -- Chapter 8. Resource Based EM Modeling for Multi-Crore Microprocessors -- Chapter 9. DRM and Optimization for Real Time Embedded Systems -- Chapter 10. Learning Based DRM and Energy Optimization for Many Core Dark Silicaon Processors -- Chapter 11. Recovery Aware DRM for Near Threshold Dark Silicon Processors -- Chapter 12. Cross-Layer DRM and Optimization For Datacenter Systems -- Part II. Transistor Aging Effects and Reliability -- 13. Introduction -- Chapter 14. Aging AWare Timings Analysis -- Chapter 15. Aging Aware Standard Cell Library Optimization Methods -- Chapter 16. Aging Effects In Sequential Elements -- Chapter 17. Aging Guardband Reduction Through Selective Flip Flop Optimization -- Chapter 18. Workload Aware Static Aging Monitoring and Mitigation of Timing Critical Flip Flops -- Chapter 19. Aging Relaxation at Micro Architecture Level Using Special NOPS -- Chapter 20. Extratime Modelling and Analyis of Transistor Agin at Microarchitecture Level -- Chapter 21. Reducing Processor Wearout By Exploiting The Timing Slack of Instructions.
520 $a This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models; Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects; Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels; Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.
650 0 $a Nanoelectromechanical systems. $3 321655
650 0 $a Integrated circuits $x Very large scale integration. $3 180020
650 1 4 $a Electronic Circuits and Devices. $3 495609
650 2 4 $a Circuits and Systems. $3 274416
650 2 4 $a Processor Architectures. $3 274498
700 1 $a Tan, Sheldon. $3 324489
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u https://doi.org/10.1007/978-3-030-26172-6
950 $a Physics and Astronomy (Springer-11651)