國立高雄大學圖資館 |

Language: English

Back

High-frequency GaN electronic devices

Fay, Patrick.

High-frequency GaN electronic devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	High-frequency GaN electronic devicesedited by Patrick Fay, Debdeep Jena, Paul Maki.
other author:	Fay, Patrick.
Published:	Cham :Springer International Publishing :2020.
Description:	viii, 309 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Semiconductors.
Online resource:	https://doi.org/10.1007/978-3-030-20208-8
ISBN:	9783030202088$q(electronic bk.)

High-frequency GaN electronic devices
High-frequency GaN electronic devices[electronic resource] /edited by Patrick Fay, Debdeep Jena, Paul Maki. - Cham :Springer International Publishing :2020. - viii, 309 p. :ill. (some col.), digital ;24 cm.

Chapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides "vertically integrated" coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

ISBN: 9783030202088$q(electronic bk.)

Standard No.: 10.1007/978-3-030-20208-8doiSubjects--Topical Terms:

182134
Semiconductors.

LC Class. No.: QC611.8.G35 / H54 2020

Dewey Class. No.: 537.6223

High-frequency GaN electronic devices
LDR:03432nmm a2200325 a 4500 001 577297
003 DE-He213
005 20200218133545.0
006 m d
007 cr nn 008maaau
008 201130s2020 sz s 0 eng d
020 $a 9783030202088$q(electronic bk.)
020 $a 9783030202071$q(paper)
024 7 $a 10.1007/978-3-030-20208-8 $2 doi
035 $a 978-3-030-20208-8
040 $a GP $c GP
041 0 $a eng
050 4 $a QC611.8.G35 $b H54 2020
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 537.6223 $2 23
090 $a QC611.8.G35 $b H638 2020
245 0 0 $a High-frequency GaN electronic devices $h [electronic resource] / $c edited by Patrick Fay, Debdeep Jena, Paul Maki.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a viii, 309 p. : $b ill. (some col.), digital ; $c 24 cm.
505 0 $a Chapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
520 $a This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides "vertically integrated" coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
650 0 $a Semiconductors. $3 182134
650 0 $a Gallium nitride. $3 210966
650 1 4 $a Circuits and Systems. $3 274416
650 2 4 $a Electronic Circuits and Devices. $3 495609
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
700 1 $a Fay, Patrick. $3 865621
700 1 $a Jena, Debdeep. $3 274628
700 1 $a Maki, Paul. $3 575384
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer eBooks
856 4 0 $u https://doi.org/10.1007/978-3-030-20208-8
950 $a Engineering (Springer-11647)