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How transistor area shrank by 1 mill...
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SpringerLink (Online service)
How transistor area shrank by 1 million fold
Record Type:
Electronic resources : Monograph/item
Title/Author:
How transistor area shrank by 1 million foldby Howard Tigelaar.
Author:
Tigelaar, Howard.
Published:
Cham :Springer International Publishing :2020.
Description:
xxiv, 319 p. :ill., digital ;24 cm.
Contained By:
Springer Nature eBook
Subject:
Integrated circuitsDesign and construction.
Online resource:
https://doi.org/10.1007/978-3-030-40021-7
ISBN:
9783030400217$q(electronic bk.)
How transistor area shrank by 1 million fold
Tigelaar, Howard.
How transistor area shrank by 1 million fold
[electronic resource] /by Howard Tigelaar. - Cham :Springer International Publishing :2020. - xxiv, 319 p. :ill., digital ;24 cm.
Introduction -- Overview -- Semiconductors and Insulators -- Diodes, MOS Transistors, Bipolar Transistors, Inverters -- Building High Performance MOS Transistors -- Parasitic MOS and Bipolar Transistors -- Design Rules and Photo Patterns -- CMOS Inverter Process Flow -- Key Inventions & Developments that Enabled Scaling -- Process Flow with Histories of Scaling at Key Steps.
This book explains in layman's terms how CMOS transistors work. The author explains step-by-step how CMOS transistors are built, along with an explanation of the purpose of each process step. He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail. Written from a process integration point of view, in language accessible to a wide variety of readers; Provides readers with an understanding of how transistors work, how they are built, and the equipment used to build them; Describes the incredible science and engineering that was developed to keep transistor scaling on a Moore's Law trajectory - (transistor area reduced by half every 2 to 3 years); Enables readers to understand the engineering choices and compromises made while scaling transistors ever smaller, with the constraints that they switch ever faster and use less and less power.
ISBN: 9783030400217$q(electronic bk.)
Standard No.: 10.1007/978-3-030-40021-7doiSubjects--Topical Terms:
184690
Integrated circuits
--Design and construction.
LC Class. No.: TK7874 / .T544 2020
Dewey Class. No.: 621.3815
How transistor area shrank by 1 million fold
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Introduction -- Overview -- Semiconductors and Insulators -- Diodes, MOS Transistors, Bipolar Transistors, Inverters -- Building High Performance MOS Transistors -- Parasitic MOS and Bipolar Transistors -- Design Rules and Photo Patterns -- CMOS Inverter Process Flow -- Key Inventions & Developments that Enabled Scaling -- Process Flow with Histories of Scaling at Key Steps.
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This book explains in layman's terms how CMOS transistors work. The author explains step-by-step how CMOS transistors are built, along with an explanation of the purpose of each process step. He describes for readers the key inventions and developments in science and engineering that overcame huge obstacles, enabling engineers to shrink transistor area by over 1 million fold and build billions of transistor switches that switch over a billion times a second, all on a piece of silicon smaller than a thumbnail. Written from a process integration point of view, in language accessible to a wide variety of readers; Provides readers with an understanding of how transistors work, how they are built, and the equipment used to build them; Describes the incredible science and engineering that was developed to keep transistor scaling on a Moore's Law trajectory - (transistor area reduced by half every 2 to 3 years); Enables readers to understand the engineering choices and compromises made while scaling transistors ever smaller, with the constraints that they switch ever faster and use less and less power.
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based on 0 review(s)
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電子館藏
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EB TK7874 .T566 2020 2020
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https://doi.org/10.1007/978-3-030-40021-7
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