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Epitaxy of semiconductorsphysics and...
~
Pohl, Udo W.
Epitaxy of semiconductorsphysics and fabrication of heterostructures /
Record Type:
Electronic resources : Monograph/item
Title/Author:
Epitaxy of semiconductorsby Udo W. Pohl.
Reminder of title:
physics and fabrication of heterostructures /
Author:
Pohl, Udo W.
Published:
Cham :Springer International Publishing :2020.
Description:
xx, 535 p. :ill., digital ;24 cm.
Contained By:
Springer Nature eBook
Subject:
Epitaxy.
Online resource:
https://doi.org/10.1007/978-3-030-43869-2
ISBN:
9783030438692$q(electronic bk.)
Epitaxy of semiconductorsphysics and fabrication of heterostructures /
Pohl, Udo W.
Epitaxy of semiconductors
physics and fabrication of heterostructures /[electronic resource] :by Udo W. Pohl. - Second edition. - Cham :Springer International Publishing :2020. - xx, 535 p. :ill., digital ;24 cm. - Graduate texts in physics,1868-4513. - Graduate texts in physics..
Introduction -- Structural Properties of Heterostructures -- Electronic Properties of Heterostructures -- Thermodynamics of Epitaxial Layer-Growth -- Atomistic Aspects of Epitaxial Layer-Growth -- In situ Growth Monitoring -- Application of Surfactants -- Doping, Diffusion, and Contacts -- Methods of Epitaxy -- Special Growth Techniques.
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations.
ISBN: 9783030438692$q(electronic bk.)
Standard No.: 10.1007/978-3-030-43869-2doiSubjects--Topical Terms:
251599
Epitaxy.
LC Class. No.: QD921 / .P645 2020
Dewey Class. No.: 548.5
Epitaxy of semiconductorsphysics and fabrication of heterostructures /
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Introduction -- Structural Properties of Heterostructures -- Electronic Properties of Heterostructures -- Thermodynamics of Epitaxial Layer-Growth -- Atomistic Aspects of Epitaxial Layer-Growth -- In situ Growth Monitoring -- Application of Surfactants -- Doping, Diffusion, and Contacts -- Methods of Epitaxy -- Special Growth Techniques.
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The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations.
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based on 0 review(s)
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1
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000000187986
電子館藏
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EB QD921 .P748 2020 2020
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1 records • Pages 1 •
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https://doi.org/10.1007/978-3-030-43869-2
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