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Electronic Transport in Atomically P...

Llinas, Juan Pablo.

Electronic Transport in Atomically Precise Graphene Nanoribbons.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electronic Transport in Atomically Precise Graphene Nanoribbons.
Author:	Llinas, Juan Pablo.
Published:	Ann Arbor : ProQuest Dissertations & Theses, 2020
Description:	85 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
Notes:	Advisor: Bokor, Jeffrey.
Contained By:	Dissertations Abstracts International82-05B.
Subject:	Electrical engineering.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27998215
ISBN:	9798678172440

Electronic Transport in Atomically Precise Graphene Nanoribbons.
Llinas, Juan Pablo.

Electronic Transport in Atomically Precise Graphene Nanoribbons. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 85 p.

Source: Dissertations Abstracts International, Volume: 82-05, Section: B.

Thesis (Ph.D.)--University of California, Berkeley, 2020.

This item must not be sold to any third party vendors.

Advancements in on-surface materials synthesis have led to the development of atomically precise graphene nanoribbons (GNRs). Bottom-up synthesized GNRs have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunneling FETs. However, the short length, wide band gap, and random orientation of GNRs have impeded the fabrication of devices with the expected performance and switching behavior. In this dissertation, progress towards integration of bottom-up synthesized GNRs into electronic devices is presented. The understanding of GNR growth and band structure is surveyed and analyzed with a focus on the implications on device yield and performance. The development of a device fabrication strategy for on-surface synthesized materials is shown, with a focus on the fabrication of high on-current and high on-off ratio 9-atom wide GNR FETs. Furthermore, device fabrication is developed for FETs with parallel arrays of GNRs transferred from single crystal Au(788), which greatly improves device yield. Finally, theoretical charge transport in GNR heterostructures is employed to demonstrate exotic device behavior such as ultra-sharp switching and negative differential resistance. The path towards state-of-the-art GNR-based logic circuits is charted in this work.

ISBN: 9798678172440Subjects--Topical Terms:

454503
Electrical engineering.
Subjects--Index Terms:

Electronic transport

Electronic Transport in Atomically Precise Graphene Nanoribbons.
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500 $a Advisor: Bokor, Jeffrey.
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506 $a This item must not be sold to any third party vendors.
520 $a Advancements in on-surface materials synthesis have led to the development of atomically precise graphene nanoribbons (GNRs). Bottom-up synthesized GNRs have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunneling FETs. However, the short length, wide band gap, and random orientation of GNRs have impeded the fabrication of devices with the expected performance and switching behavior. In this dissertation, progress towards integration of bottom-up synthesized GNRs into electronic devices is presented. The understanding of GNR growth and band structure is surveyed and analyzed with a focus on the implications on device yield and performance. The development of a device fabrication strategy for on-surface synthesized materials is shown, with a focus on the fabrication of high on-current and high on-off ratio 9-atom wide GNR FETs. Furthermore, device fabrication is developed for FETs with parallel arrays of GNRs transferred from single crystal Au(788), which greatly improves device yield. Finally, theoretical charge transport in GNR heterostructures is employed to demonstrate exotic device behavior such as ultra-sharp switching and negative differential resistance. The path towards state-of-the-art GNR-based logic circuits is charted in this work.
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