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TFET integrated circuitsfrom perspec...
~
Gupta, Navneet.
TFET integrated circuitsfrom perspective towards reality /
Record Type:
Electronic resources : Monograph/item
Title/Author:
TFET integrated circuitsby Navneet Gupta ... [et al.].
Reminder of title:
from perspective towards reality /
other author:
Gupta, Navneet.
Published:
Cham :Springer International Publishing :2021.
Description:
xv, 139 p. :ill., digital ;24 cm.
Contained By:
Springer Nature eBook
Subject:
Tunnel field-effect transistors.
Online resource:
https://doi.org/10.1007/978-3-030-55119-3
ISBN:
9783030551193$q(electronic bk.)
TFET integrated circuitsfrom perspective towards reality /
TFET integrated circuits
from perspective towards reality /[electronic resource] :by Navneet Gupta ... [et al.]. - Cham :Springer International Publishing :2021. - xv, 139 p. :ill., digital ;24 cm.
Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.
This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs) The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.
ISBN: 9783030551193$q(electronic bk.)
Standard No.: 10.1007/978-3-030-55119-3doiSubjects--Topical Terms:
813705
Tunnel field-effect transistors.
LC Class. No.: TK7871.95
Dewey Class. No.: 621.3815284
TFET integrated circuitsfrom perspective towards reality /
LDR
:02250nmm a2200337 a 4500
001
595891
003
DE-He213
005
20201106145449.0
006
m d
007
cr nn 008maaau
008
211013s2021 sz s 0 eng d
020
$a
9783030551193$q(electronic bk.)
020
$a
9783030551186$q(paper)
024
7
$a
10.1007/978-3-030-55119-3
$2
doi
035
$a
978-3-030-55119-3
040
$a
GP
$c
GP
$e
rda
041
0
$a
eng
050
4
$a
TK7871.95
072
7
$a
TJFC
$2
bicssc
072
7
$a
TEC008010
$2
bisacsh
072
7
$a
TJFC
$2
thema
072
7
$a
TJFD
$2
thema
082
0 4
$a
621.3815284
$2
23
090
$a
TK7871.95
$b
.T356 2021
245
0 0
$a
TFET integrated circuits
$h
[electronic resource] :
$b
from perspective towards reality /
$c
by Navneet Gupta ... [et al.].
260
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2021.
300
$a
xv, 139 p. :
$b
ill., digital ;
$c
24 cm.
505
0
$a
Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.
520
$a
This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs) The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.
650
0
$a
Tunnel field-effect transistors.
$3
813705
650
0
$a
Integrated circuits
$x
Design and construction.
$3
184690
650
0
$a
Nanostructured materials.
$3
216041
650
0
$a
Low voltage integrated circuits.
$3
185509
650
1 4
$a
Electronic Circuits and Devices.
$3
495609
650
2 4
$a
Circuits and Systems.
$3
274416
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
274412
700
1
$a
Gupta, Navneet.
$3
888430
710
2
$a
SpringerLink (Online service)
$3
273601
773
0
$t
Springer Nature eBook
856
4 0
$u
https://doi.org/10.1007/978-3-030-55119-3
950
$a
Engineering (SpringerNature-11647)
based on 0 review(s)
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EB TK7871.95 .T356 2021 2021
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https://doi.org/10.1007/978-3-030-55119-3
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