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Near infrared detectors based on sil...

Montero Alvarez, Daniel.

Near infrared detectors based on silicon supersaturated with transition metals

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Near infrared detectors based on silicon supersaturated with transition metalsby Daniel Montero Alvarez.
作者:	Montero Alvarez, Daniel.
出版者:	Cham :Springer International Publishing :2021.
面頁冊數:	xxxvi, 230 p. :ill., digital ;24 cm.
Contained By:	Springer Nature eBook
標題:	Infrared detectorsMaterials.
電子資源:	https://doi.org/10.1007/978-3-030-63826-9
ISBN:	9783030638269$q(electronic bk.)

Near infrared detectors based on silicon supersaturated with transition metals
Montero Alvarez, Daniel.

Near infrared detectors based on silicon supersaturated with transition metals[electronic resource] /by Daniel Montero Alvarez. - Cham :Springer International Publishing :2021. - xxxvi, 230 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

ISBN: 9783030638269$q(electronic bk.)

Standard No.: 10.1007/978-3-030-63826-9doiSubjects--Topical Terms:

664286
Infrared detectors
--Materials.

LC Class. No.: TA1570 / .M668 2021

Dewey Class. No.: 621.362

Near infrared detectors based on silicon supersaturated with transition metals
LDR:02524nmm a2200337 a 4500 001 596876
003 DE-He213
005 20210624141226.0
006 m d
007 cr nn 008maaau
008 211019s2021 sz s 0 eng d
020 $a 9783030638269$q(electronic bk.)
020 $a 9783030638252$q(paper)
024 7 $a 10.1007/978-3-030-63826-9 $2 doi
035 $a 978-3-030-63826-9
040 $a GP $c GP
041 0 $a eng
050 4 $a TA1570 $b .M668 2021
072 7 $a TJFD $2 bicssc
072 7 $a TEC021020 $2 bisacsh
072 7 $a TJFD $2 thema
082 0 4 $a 621.362 $2 23
090 $a TA1570 $b .M778 2021
100 1 $a Montero Alvarez, Daniel. $3 889897
245 1 0 $a Near infrared detectors based on silicon supersaturated with transition metals $h [electronic resource] / $c by Daniel Montero Alvarez.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2021.
300 $a xxxvi, 230 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer theses, $x 2190-5053
505 0 $a Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.
520 $a This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
650 0 $a Infrared detectors $x Materials. $3 664286
650 0 $a Silicon compounds. $3 194329
650 1 4 $a Optical and Electronic Materials. $3 274099
650 2 4 $a Analytical Chemistry. $3 273936
650 2 4 $a Materials Science, general. $3 308687
650 2 4 $a Chemistry/Food Science, general. $3 274166
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
830 0 $a Springer theses. $3 557607
856 4 0 $u https://doi.org/10.1007/978-3-030-63826-9
950 $a Chemistry and Materials Science (SpringerNature-11644)