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Electronic properties of rhombohedra...

Ozdemir, Servet.

Electronic properties of rhombohedral graphite

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electronic properties of rhombohedral graphiteby Servet Ozdemir.
作者:	Ozdemir, Servet.
出版者:	Cham :Springer International Publishing :2021.
面頁冊數:	xv, 132 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer Nature eBook
標題:	Graphite.
電子資源:	https://doi.org/10.1007/978-3-030-88307-2
ISBN:	9783030883072$q(electronic bk.)

Electronic properties of rhombohedral graphite
Ozdemir, Servet.

Electronic properties of rhombohedral graphite[electronic resource] /by Servet Ozdemir. - Cham :Springer International Publishing :2021. - xv, 132 p. :ill. (some col.), digital ;24 cm. - Springer theses,2190-5061. - Springer theses..

Introduction To Rhombohedral Graphite -- Fundamentals Of Electron Transport -- Experimental Technicalities -- Bulk Versus Surface Conduction -- Landau Level Spectroscopy.

This thesis presents the first systematic electron transport investigation of rhombohedral graphite (RG) films and thus lies at the interface of graphene physics, vdW heterostructure devices and topological matter. Electron transport investigation into the rhombohedral phase of graphite was limited to a few layers of graphene due to the competing hexagonal phase being more abundant. This work reports that in exfoliated natural graphite films, rhombohedral domains of up to 50 layers can be found. In the low energy limit, these domains behave as an N-layer generalisation of graphene. Moreover, being a potential alternative to twisted bilayer graphene systems, RG films show a spontaneous metal-insulator transition, with characteristic symmetry properties that could be described by mean-field theory where superconductivity is also predicted in these low energy bands. A nodal-line semimetal in the bulk limit, RG thin films are a 3D generalisation of the simplest topological insulator model: the Su-Schrieffer-Heeger chain. Similar to the more usual topological insulators, RG films exhibit parallel conduction of bulk states, which undergo three-dimensional quantum transport that reflects bulk topology.

ISBN: 9783030883072$q(electronic bk.)

Standard No.: 10.1007/978-3-030-88307-2doiSubjects--Topical Terms:

664563
Graphite.

LC Class. No.: QC176.9.N64 / O93 2021

Dewey Class. No.: 530.4275

Electronic properties of rhombohedral graphite
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505 0 $a Introduction To Rhombohedral Graphite -- Fundamentals Of Electron Transport -- Experimental Technicalities -- Bulk Versus Surface Conduction -- Landau Level Spectroscopy.
520 $a This thesis presents the first systematic electron transport investigation of rhombohedral graphite (RG) films and thus lies at the interface of graphene physics, vdW heterostructure devices and topological matter. Electron transport investigation into the rhombohedral phase of graphite was limited to a few layers of graphene due to the competing hexagonal phase being more abundant. This work reports that in exfoliated natural graphite films, rhombohedral domains of up to 50 layers can be found. In the low energy limit, these domains behave as an N-layer generalisation of graphene. Moreover, being a potential alternative to twisted bilayer graphene systems, RG films show a spontaneous metal-insulator transition, with characteristic symmetry properties that could be described by mean-field theory where superconductivity is also predicted in these low energy bands. A nodal-line semimetal in the bulk limit, RG thin films are a 3D generalisation of the simplest topological insulator model: the Su-Schrieffer-Heeger chain. Similar to the more usual topological insulators, RG films exhibit parallel conduction of bulk states, which undergo three-dimensional quantum transport that reflects bulk topology.
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