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RF and time-domain techniques for evaluating novel semiconductor transistors

Record Type:	Electronic resources : Monograph/item
Title/Author:	RF and time-domain techniques for evaluating novel semiconductor transistorsby Keith A. Jenkins.
Author:	Jenkins, Keith A.
Published:	Cham :Springer International Publishing :2022.
Description:	xi, 168 p. :ill., digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Field-effect transistors.
Online resource:	https://doi.org/10.1007/978-3-030-77775-3
ISBN:	9783030777753$q(electronic bk.)

RF and time-domain techniques for evaluating novel semiconductor transistors
Jenkins, Keith A.

RF and time-domain techniques for evaluating novel semiconductor transistors[electronic resource] /by Keith A. Jenkins. - Cham :Springer International Publishing :2022. - xi, 168 p. :ill., digital ;24 cm.

Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

ISBN: 9783030777753$q(electronic bk.)

Standard No.: 10.1007/978-3-030-77775-3doiSubjects--Topical Terms:

200533
Field-effect transistors.

LC Class. No.: TK7871.95 / .J45 2022

Dewey Class. No.: 621.3815284

RF and time-domain techniques for evaluating novel semiconductor transistors
LDR:02298nmm a2200325 a 4500 001 619279
003 DE-He213
005 20211215195551.0
006 m d
007 cr nn 008maaau
008 221103s2022 sz s 0 eng d
020 $a 9783030777753$q(electronic bk.)
020 $a 9783030777746$q(paper)
024 7 $a 10.1007/978-3-030-77775-3 $2 doi
035 $a 978-3-030-77775-3
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95 $b .J45 2022
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .J52 2022
100 1 $a Jenkins, Keith A. $3 919484
245 1 0 $a RF and time-domain techniques for evaluating novel semiconductor transistors $h [electronic resource] / $c by Keith A. Jenkins.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a xi, 168 p. : $b ill., digital ; $c 24 cm.
505 0 $a Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
520 $a This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
650 0 $a Field-effect transistors. $3 200533
650 1 4 $a Circuits and Systems. $3 274416
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
650 2 4 $a Microwaves, RF and Optical Engineering. $3 274186
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
856 4 0 $u https://doi.org/10.1007/978-3-030-77775-3
950 $a Engineering (SpringerNature-11647)