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Advanced SPICE model for GaN HEMTs (ASM-HEMT)a new industry-standard compact model for GaN-based power and RF circuit design /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Advanced SPICE model for GaN HEMTs (ASM-HEMT)by Sourabh Khandelwal.
Reminder of title:	a new industry-standard compact model for GaN-based power and RF circuit design /
Author:	Khandelwal, Sourabh.
Published:	Cham :Springer International Publishing :2022.
Description:	xv, 188 p. :ill., digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Modulation-doped field-effect transistors.
Online resource:	https://doi.org/10.1007/978-3-030-77730-2
ISBN:	9783030777302$q(electronic bk.)

Advanced SPICE model for GaN HEMTs (ASM-HEMT)a new industry-standard compact model for GaN-based power and RF circuit design /
Khandelwal, Sourabh.

Advanced SPICE model for GaN HEMTs (ASM-HEMT)a new industry-standard compact model for GaN-based power and RF circuit design /[electronic resource] :by Sourabh Khandelwal. - Cham :Springer International Publishing :2022. - xv, 188 p. :ill., digital ;24 cm.

Introduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model - Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model.

This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

ISBN: 9783030777302$q(electronic bk.)

Standard No.: 10.1007/978-3-030-77730-2doiSubjects--Topical Terms:

200535
Modulation-doped field-effect transistors.

LC Class. No.: TK7871.95 / .K43 2022

Dewey Class. No.: 621.3815284

Advanced SPICE model for GaN HEMTs (ASM-HEMT)a new industry-standard compact model for GaN-based power and RF circuit design /
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505 0 $a Introduction -- GaN Device Operation -- Introduction to device modeling -- Industry standard ASM-HEMT compact model - Introduction -- Core charge and current model in ASM-HEMT model -- Real device effects model in ASM-HEMT model -- Radio-frequency GaN modeling with ASM-HEMT model -- Power GaN device modeling with ASM-HEMT model -- Model quality testing -- Design-Technology Co-optimization with ASM-HEMT model.
520 $a This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
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