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Integrated electronics on aluminum nitridematerials and devices /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Integrated electronics on aluminum nitrideby Reet Chaudhuri.
Reminder of title:	materials and devices /
Author:	Chaudhuri, Reet.
Published:	Cham :Springer International Publishing :2022.
Description:	xvi, 255 p. :ill. (chiefly color), digital ;24 cm.
Notes:	"Doctoral thesis accepted by Cornell University, USA."
Contained By:	Springer Nature eBook
Subject:	Semiconductors.
Online resource:	https://doi.org/10.1007/978-3-031-17199-4
ISBN:	9783031171994$q(electronic bk.)

Integrated electronics on aluminum nitridematerials and devices /
Chaudhuri, Reet.

Integrated electronics on aluminum nitridematerials and devices /[electronic resource] :by Reet Chaudhuri. - Cham :Springer International Publishing :2022. - xvi, 255 p. :ill. (chiefly color), digital ;24 cm. - Springer theses,2190-5061. - Springer theses..

"Doctoral thesis accepted by Cornell University, USA."

Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

ISBN: 9783031171994$q(electronic bk.)

Standard No.: 10.1007/978-3-031-17199-4doiSubjects--Topical Terms:

182134
Semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

Integrated electronics on aluminum nitridematerials and devices /
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505 0 $a Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.
520 $a This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
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