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Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
Author:	Lindemann, Shane M.
Published:	Ann Arbor : ProQuest Dissertations & Theses, 2022
Description:	143 p.
Notes:	Source: Dissertations Abstracts International, Volume: 84-03, Section: B.
Notes:	Advisor: Eom, Chang-Beom.
Contained By:	Dissertations Abstracts International84-03B.
Subject:	Condensed matter physics.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29323738
ISBN:	9798841731313

Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
Lindemann, Shane M.

Magnetoelectric Coupling in Membrane Thin-Film Heterostructures. - Ann Arbor : ProQuest Dissertations & Theses, 2022 - 143 p.

Source: Dissertations Abstracts International, Volume: 84-03, Section: B.

Thesis (Ph.D.)--The University of Wisconsin - Madison, 2022.

This item must not be sold to any third party vendors.

Strain-coupling in ferromagnetic (FM) / ferroelectric (FE) multiferroic heterostructures shows promise to become the next generation of low-power, ultra-fast memory storage devices in addition to opening new avenues of fundamental scientific research. The relaxor ferroelectric (1–x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-PT) is an ideal candidate as the FE layer due to its giant piezoelectricity. By coupling with a FM overlayer, an applied bias across the PMN-PT results in the generation of large piezostrains which are transferred into the FM layer to alter the FM’s magnetic anisotropy, resulting in a piezo-driven magnetoelectric (ME) effect. This has been demonstrated using bulk single crystals of PMN-PT coupled with FM overlayers, but the bulk dimensions required application of over 100V applied bias. For low power coupling to be achieved, thin films of PMN-PT must be used. Strain-mediated ME coupling in thin film heterostructures has proven to be difficult due to two major challenges: 1) Elastic clamping by the substrate acts to eliminate giant piezoelectricity in PMN-PT thin films. 2) The films must exhibit anisotropic in-plane strain to alter in-plane magnetic anisotropy of a FM overlayer. Our approach to overcome these challenges is through growth of epitaxial thin films of PMN-PT followed by release of the films from their substrate to make ME membranes. After release from the substrate, we observe a recovery of giant piezoelectricity in PMN-PT membranes and demonstrate successful ME coupling with Ni overlayers. We found that for (001) oriented PMN-PT membranes, the nominally isotropic in-plane strains are transformed into anisotropic in-plane strains through Piezotensor Engineering, i.e. an interaction between biased and unbiased regions dictated by the electrode geometry. In (011) PMN-PT membranes, intrinsic anisotropic in-plane strains result in a 90-degree rotation of Ni’s in-plane anisotropy with only 3V bias across the PMN-PT, demonstrating that PMN-PT membranes can achieve low power ME coupling. The membrane assembled heterostructures will lead to novel strain-mediated devices through heterogeneous integration. Individual membranes of various materials, including complex oxides, III-V’s, and 2-Dimensional (2D) materials, can be stacked together with the PMN-PT membranes providing an exciting pathway to study an extraordinary range of piezo-driven phenomena and functionalities.

ISBN: 9798841731313Subjects--Topical Terms:

708726
Condensed matter physics.
Subjects--Index Terms:

Magnetoelectric

Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
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245 1 0 $a Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
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300 $a 143 p.
500 $a Source: Dissertations Abstracts International, Volume: 84-03, Section: B.
500 $a Advisor: Eom, Chang-Beom.
502 $a Thesis (Ph.D.)--The University of Wisconsin - Madison, 2022.
506 $a This item must not be sold to any third party vendors.
520 $a Strain-coupling in ferromagnetic (FM) / ferroelectric (FE) multiferroic heterostructures shows promise to become the next generation of low-power, ultra-fast memory storage devices in addition to opening new avenues of fundamental scientific research. The relaxor ferroelectric (1–x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-PT) is an ideal candidate as the FE layer due to its giant piezoelectricity. By coupling with a FM overlayer, an applied bias across the PMN-PT results in the generation of large piezostrains which are transferred into the FM layer to alter the FM’s magnetic anisotropy, resulting in a piezo-driven magnetoelectric (ME) effect. This has been demonstrated using bulk single crystals of PMN-PT coupled with FM overlayers, but the bulk dimensions required application of over 100V applied bias. For low power coupling to be achieved, thin films of PMN-PT must be used. Strain-mediated ME coupling in thin film heterostructures has proven to be difficult due to two major challenges: 1) Elastic clamping by the substrate acts to eliminate giant piezoelectricity in PMN-PT thin films. 2) The films must exhibit anisotropic in-plane strain to alter in-plane magnetic anisotropy of a FM overlayer. Our approach to overcome these challenges is through growth of epitaxial thin films of PMN-PT followed by release of the films from their substrate to make ME membranes. After release from the substrate, we observe a recovery of giant piezoelectricity in PMN-PT membranes and demonstrate successful ME coupling with Ni overlayers. We found that for (001) oriented PMN-PT membranes, the nominally isotropic in-plane strains are transformed into anisotropic in-plane strains through Piezotensor Engineering, i.e. an interaction between biased and unbiased regions dictated by the electrode geometry. In (011) PMN-PT membranes, intrinsic anisotropic in-plane strains result in a 90-degree rotation of Ni’s in-plane anisotropy with only 3V bias across the PMN-PT, demonstrating that PMN-PT membranes can achieve low power ME coupling. The membrane assembled heterostructures will lead to novel strain-mediated devices through heterogeneous integration. Individual membranes of various materials, including complex oxides, III-V’s, and 2-Dimensional (2D) materials, can be stacked together with the PMN-PT membranes providing an exciting pathway to study an extraordinary range of piezo-driven phenomena and functionalities.
590 $a School code: 0262.
650 4 $a Condensed matter physics. $3 708726
650 4 $a Materials science. $3 221779
653 $a Magnetoelectric
653 $a Multiferroic heterostructure
653 $a Relaxor ferroelectric
653 $a Thin Film
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690 $a 0611
710 2 $a The University of Wisconsin - Madison. $b Materials Science and Engineering. $3 942536
773 0 $t Dissertations Abstracts International $g 84-03B.
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791 $a Ph.D.
792 $a 2022
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29323738