語系:
繁體中文
English
說明(常見問題)
圖資館首頁
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
作者:
Lindemann, Shane M.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, 2022
面頁冊數:
143 p.
附註:
Source: Dissertations Abstracts International, Volume: 84-03, Section: B.
附註:
Advisor: Eom, Chang-Beom.
Contained By:
Dissertations Abstracts International84-03B.
標題:
Condensed matter physics.
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29323738
ISBN:
9798841731313
Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
Lindemann, Shane M.
Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
- Ann Arbor : ProQuest Dissertations & Theses, 2022 - 143 p.
Source: Dissertations Abstracts International, Volume: 84-03, Section: B.
Thesis (Ph.D.)--The University of Wisconsin - Madison, 2022.
This item must not be sold to any third party vendors.
Strain-coupling in ferromagnetic (FM) / ferroelectric (FE) multiferroic heterostructures shows promise to become the next generation of low-power, ultra-fast memory storage devices in addition to opening new avenues of fundamental scientific research. The relaxor ferroelectric (1–x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-PT) is an ideal candidate as the FE layer due to its giant piezoelectricity. By coupling with a FM overlayer, an applied bias across the PMN-PT results in the generation of large piezostrains which are transferred into the FM layer to alter the FM’s magnetic anisotropy, resulting in a piezo-driven magnetoelectric (ME) effect. This has been demonstrated using bulk single crystals of PMN-PT coupled with FM overlayers, but the bulk dimensions required application of over 100V applied bias. For low power coupling to be achieved, thin films of PMN-PT must be used. Strain-mediated ME coupling in thin film heterostructures has proven to be difficult due to two major challenges: 1) Elastic clamping by the substrate acts to eliminate giant piezoelectricity in PMN-PT thin films. 2) The films must exhibit anisotropic in-plane strain to alter in-plane magnetic anisotropy of a FM overlayer. Our approach to overcome these challenges is through growth of epitaxial thin films of PMN-PT followed by release of the films from their substrate to make ME membranes. After release from the substrate, we observe a recovery of giant piezoelectricity in PMN-PT membranes and demonstrate successful ME coupling with Ni overlayers. We found that for (001) oriented PMN-PT membranes, the nominally isotropic in-plane strains are transformed into anisotropic in-plane strains through Piezotensor Engineering, i.e. an interaction between biased and unbiased regions dictated by the electrode geometry. In (011) PMN-PT membranes, intrinsic anisotropic in-plane strains result in a 90-degree rotation of Ni’s in-plane anisotropy with only 3V bias across the PMN-PT, demonstrating that PMN-PT membranes can achieve low power ME coupling. The membrane assembled heterostructures will lead to novel strain-mediated devices through heterogeneous integration. Individual membranes of various materials, including complex oxides, III-V’s, and 2-Dimensional (2D) materials, can be stacked together with the PMN-PT membranes providing an exciting pathway to study an extraordinary range of piezo-driven phenomena and functionalities.
ISBN: 9798841731313Subjects--Topical Terms:
708726
Condensed matter physics.
Subjects--Index Terms:
Magnetoelectric
Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
LDR
:03612nmm a2200373 4500
001
636162
005
20230501063915.5
006
m o d
007
cr#unu||||||||
008
230724s2022 ||||||||||||||||| ||eng d
020
$a
9798841731313
035
$a
(MiAaPQ)AAI29323738
035
$a
AAI29323738
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Lindemann, Shane M.
$3
942535
245
1 0
$a
Magnetoelectric Coupling in Membrane Thin-Film Heterostructures.
260
1
$a
Ann Arbor :
$b
ProQuest Dissertations & Theses,
$c
2022
300
$a
143 p.
500
$a
Source: Dissertations Abstracts International, Volume: 84-03, Section: B.
500
$a
Advisor: Eom, Chang-Beom.
502
$a
Thesis (Ph.D.)--The University of Wisconsin - Madison, 2022.
506
$a
This item must not be sold to any third party vendors.
520
$a
Strain-coupling in ferromagnetic (FM) / ferroelectric (FE) multiferroic heterostructures shows promise to become the next generation of low-power, ultra-fast memory storage devices in addition to opening new avenues of fundamental scientific research. The relaxor ferroelectric (1–x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-PT) is an ideal candidate as the FE layer due to its giant piezoelectricity. By coupling with a FM overlayer, an applied bias across the PMN-PT results in the generation of large piezostrains which are transferred into the FM layer to alter the FM’s magnetic anisotropy, resulting in a piezo-driven magnetoelectric (ME) effect. This has been demonstrated using bulk single crystals of PMN-PT coupled with FM overlayers, but the bulk dimensions required application of over 100V applied bias. For low power coupling to be achieved, thin films of PMN-PT must be used. Strain-mediated ME coupling in thin film heterostructures has proven to be difficult due to two major challenges: 1) Elastic clamping by the substrate acts to eliminate giant piezoelectricity in PMN-PT thin films. 2) The films must exhibit anisotropic in-plane strain to alter in-plane magnetic anisotropy of a FM overlayer. Our approach to overcome these challenges is through growth of epitaxial thin films of PMN-PT followed by release of the films from their substrate to make ME membranes. After release from the substrate, we observe a recovery of giant piezoelectricity in PMN-PT membranes and demonstrate successful ME coupling with Ni overlayers. We found that for (001) oriented PMN-PT membranes, the nominally isotropic in-plane strains are transformed into anisotropic in-plane strains through Piezotensor Engineering, i.e. an interaction between biased and unbiased regions dictated by the electrode geometry. In (011) PMN-PT membranes, intrinsic anisotropic in-plane strains result in a 90-degree rotation of Ni’s in-plane anisotropy with only 3V bias across the PMN-PT, demonstrating that PMN-PT membranes can achieve low power ME coupling. The membrane assembled heterostructures will lead to novel strain-mediated devices through heterogeneous integration. Individual membranes of various materials, including complex oxides, III-V’s, and 2-Dimensional (2D) materials, can be stacked together with the PMN-PT membranes providing an exciting pathway to study an extraordinary range of piezo-driven phenomena and functionalities.
590
$a
School code: 0262.
650
4
$a
Condensed matter physics.
$3
708726
650
4
$a
Materials science.
$3
221779
653
$a
Magnetoelectric
653
$a
Multiferroic heterostructure
653
$a
Relaxor ferroelectric
653
$a
Thin Film
690
$a
0794
690
$a
0611
710
2
$a
The University of Wisconsin - Madison.
$b
Materials Science and Engineering.
$3
942536
773
0
$t
Dissertations Abstracts International
$g
84-03B.
790
$a
0262
791
$a
Ph.D.
792
$a
2022
793
$a
English
856
4 0
$u
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29323738
筆 0 讀者評論
全部
電子館藏
館藏
1 筆 • 頁數 1 •
1
條碼號
館藏地
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
000000223066
電子館藏
1圖書
電子書
EB 2022
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
多媒體檔案
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29323738
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼
登入