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Electronically Active Defects near Surfaces and Interfaces of Conducting 2D Systems.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electronically Active Defects near Surfaces and Interfaces of Conducting 2D Systems.
Author:	Noesges, Brenton A.
Published:	Ann Arbor : ProQuest Dissertations & Theses, 2022
Description:	191 p.
Notes:	Source: Dissertations Abstracts International, Volume: 84-05, Section: B.
Notes:	Advisor: Brillson, Leonard.
Contained By:	Dissertations Abstracts International84-05B.
Subject:	Physics.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30164381
ISBN:	9798352637418

Electronically Active Defects near Surfaces and Interfaces of Conducting 2D Systems.
Noesges, Brenton A.

Electronically Active Defects near Surfaces and Interfaces of Conducting 2D Systems. - Ann Arbor : ProQuest Dissertations & Theses, 2022 - 191 p.

Source: Dissertations Abstracts International, Volume: 84-05, Section: B.

Thesis (Ph.D.)--The Ohio State University, 2022.

This item must not be sold to any third party vendors.

Ultrathin materials will play a crucial role in next-generation electronic devices but defects in these materials are unavoidable. The effect of defects can permeate entire ultrathin layers and extend beyond interfaces into adjacent layers. Identifying and understanding atomic scale defects inside ultrathin electronic materials leads to new ways of controlling and eliminating defects to achieve higher performance devices and tune electronic and magnetic properties. Complex oxides and two-dimensional (2D) materials are ideal for creating ultrathin conducting layers. Both classes of materials exhibit a wide range of dielectric, optoelectronic and magnetic properties useful in a range of device applications. 2D materials can be isolated down to layers just a single atom thick leading to thinner and higher performance electronics. Virtually all applications of these materials involve interfaces with other materials which presents special challenges since defects near interfaces impact material properties on either side of the interface. Surface science techniques specialized at investigating ultrathin layers such as depth-resolved cathodoluminescence spectroscopy (DRCLS) and x-ray photoelectron spectroscopy (XPS) must be used to improve these materials. The van der Waals gap which allows individual 2D layers to be isolated from one another opens the opportunity for foreign particles such as water to reside between layers and impact electronic properties. Water sitting between layers of germanane, a graphene analogue, significantly impacts luminescence properties and points to an important effect that intercalants between layers need to be accounted for when creating heterostructures based using 2D materials. While 2D materials can be mechanically exfoliated and isolated in monolayers, better interfaces can be achieved if single 2D layers are deposited directly onto a substrate using techniques such as molecular beam epitaxy (MBE). However, conditions under which 2D materials are grown can significantly impact the interfacial properties between the 2D material and the substrate. We used XPS to study the effect of growth conditions on interface properties between MnSe2, a 2D ferromagnet and Bi2Se3, a topological insulator. The samples were transferred from MBE into XPS using a UHV suitcase to study pristine interfaces and prevent air exposure. Interfaces between complex oxides are also important such as the 2D electron gas (2DEG) that forms between two otherwise insulating complex oxides, LaAlO3 and SrTiO3. A complementary 2D hole gas (2DHG) was expected to form at these interfaces as well, but defect formation made observing that interface more challenging. Advanced growth designed to control defect formation and near-nanoscale resolved defect identification confirmed that minimizing oxygen vacancies was the key to realizing a conducting 2DHG. Cation vacancies and anti-site substitutions can also play a large role in the physical properties of complex oxides and impact charge distributions extending tens of nanometers below interfaces. Identifying and controlling defects plays an important role in achieving advanced electronic features at complex oxide interfaces. DRCLS is a powerful tool to study such interfaces formed with ultrathin layers. Combining MBE with DRCLS and XPS using all UHV transfers is a powerful approach to create complex oxide interfaces and study the impact of nearby defects without external contamination.

ISBN: 9798352637418Subjects--Topical Terms:

179414
Physics.
Subjects--Index Terms:

Depth-resolved cathodoluminescence spectroscopy

Electronically Active Defects near Surfaces and Interfaces of Conducting 2D Systems.
LDR:04779nmm a2200397 4500 001 636209
005 20230501063928.5
006 m o d
007 cr#unu||||||||
008 230724s2022 ||||||||||||||||| ||eng d
020 $a 9798352637418
035 $a (MiAaPQ)AAI30164381
035 $a (MiAaPQ)OhioLINKosu165814481024193
035 $a AAI30164381
040 $a MiAaPQ $c MiAaPQ
100 1 $a Noesges, Brenton A. $3 942655
245 1 0 $a Electronically Active Defects near Surfaces and Interfaces of Conducting 2D Systems.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2022
300 $a 191 p.
500 $a Source: Dissertations Abstracts International, Volume: 84-05, Section: B.
500 $a Advisor: Brillson, Leonard.
502 $a Thesis (Ph.D.)--The Ohio State University, 2022.
506 $a This item must not be sold to any third party vendors.
520 $a Ultrathin materials will play a crucial role in next-generation electronic devices but defects in these materials are unavoidable. The effect of defects can permeate entire ultrathin layers and extend beyond interfaces into adjacent layers. Identifying and understanding atomic scale defects inside ultrathin electronic materials leads to new ways of controlling and eliminating defects to achieve higher performance devices and tune electronic and magnetic properties. Complex oxides and two-dimensional (2D) materials are ideal for creating ultrathin conducting layers. Both classes of materials exhibit a wide range of dielectric, optoelectronic and magnetic properties useful in a range of device applications. 2D materials can be isolated down to layers just a single atom thick leading to thinner and higher performance electronics. Virtually all applications of these materials involve interfaces with other materials which presents special challenges since defects near interfaces impact material properties on either side of the interface. Surface science techniques specialized at investigating ultrathin layers such as depth-resolved cathodoluminescence spectroscopy (DRCLS) and x-ray photoelectron spectroscopy (XPS) must be used to improve these materials. The van der Waals gap which allows individual 2D layers to be isolated from one another opens the opportunity for foreign particles such as water to reside between layers and impact electronic properties. Water sitting between layers of germanane, a graphene analogue, significantly impacts luminescence properties and points to an important effect that intercalants between layers need to be accounted for when creating heterostructures based using 2D materials. While 2D materials can be mechanically exfoliated and isolated in monolayers, better interfaces can be achieved if single 2D layers are deposited directly onto a substrate using techniques such as molecular beam epitaxy (MBE). However, conditions under which 2D materials are grown can significantly impact the interfacial properties between the 2D material and the substrate. We used XPS to study the effect of growth conditions on interface properties between MnSe2, a 2D ferromagnet and Bi2Se3, a topological insulator. The samples were transferred from MBE into XPS using a UHV suitcase to study pristine interfaces and prevent air exposure. Interfaces between complex oxides are also important such as the 2D electron gas (2DEG) that forms between two otherwise insulating complex oxides, LaAlO3 and SrTiO3. A complementary 2D hole gas (2DHG) was expected to form at these interfaces as well, but defect formation made observing that interface more challenging. Advanced growth designed to control defect formation and near-nanoscale resolved defect identification confirmed that minimizing oxygen vacancies was the key to realizing a conducting 2DHG. Cation vacancies and anti-site substitutions can also play a large role in the physical properties of complex oxides and impact charge distributions extending tens of nanometers below interfaces. Identifying and controlling defects plays an important role in achieving advanced electronic features at complex oxide interfaces. DRCLS is a powerful tool to study such interfaces formed with ultrathin layers. Combining MBE with DRCLS and XPS using all UHV transfers is a powerful approach to create complex oxide interfaces and study the impact of nearby defects without external contamination.
590 $a School code: 0168.
650 4 $a Physics. $3 179414
650 4 $a Condensed matter physics. $3 708726
653 $a Depth-resolved cathodoluminescence spectroscopy
653 $a X-ray photoelectron spectroscopy
653 $a Defects
653 $a Complex oxides
653 $a 2D materials
690 $a 0611
690 $a 0605
710 2 $a The Ohio State University. $b Physics. $3 530967
773 0 $t Dissertations Abstracts International $g 84-05B.
790 $a 0168
791 $a Ph.D.
792 $a 2022
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30164381