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Flexible and Stretchable Lumped Microwave Passive Components and Filters and Interfacial Band-Bending Parameters of ALD Ultrathin ZrO2 on c-Plane, Ga-Face GaN Through XPS Measurements.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Flexible and Stretchable Lumped Microwave Passive Components and Filters and Interfacial Band-Bending Parameters of ALD Ultrathin ZrO2 on c-Plane, Ga-Face GaN Through XPS Measurements.
Author:	Qiu, Shuoyang.
Published:	Ann Arbor : ProQuest Dissertations & Theses, 2022
Description:	68 p.
Notes:	Source: Dissertations Abstracts International, Volume: 84-07, Section: B.
Notes:	Advisor: Ma, Zhenqiang.
Contained By:	Dissertations Abstracts International84-07B.
Subject:	Electrical engineering.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29997202
ISBN:	9798363515262

Flexible and Stretchable Lumped Microwave Passive Components and Filters and Interfacial Band-Bending Parameters of ALD Ultrathin ZrO2 on c-Plane, Ga-Face GaN Through XPS Measurements.
Qiu, Shuoyang.

Flexible and Stretchable Lumped Microwave Passive Components and Filters and Interfacial Band-Bending Parameters of ALD Ultrathin ZrO2 on c-Plane, Ga-Face GaN Through XPS Measurements. - Ann Arbor : ProQuest Dissertations & Theses, 2022 - 68 p.

Source: Dissertations Abstracts International, Volume: 84-07, Section: B.

Thesis (Ph.D.)--The University of Wisconsin - Madison, 2022.

This item must not be sold to any third party vendors.

Flexible and stretchable microwave electronics have attracted mounting interests and have been investigated in many emerging fields with their capabilities of forming light weighted, robust, and bendable circuits. There are a large variety of flexible and stretchable design towards different potential applications, such as flexible displays, electronic tags, solar cells, and medical devices. However, microwave electronics in mechanically flexible or stretchable cannot be easily addressed by traditional rigid microwave electronics techniques, which need take flexible substrates with both excellent microwave properties including low resistive loss and low tangent loss and bendability parameters into considerations. This dissertation studies the design criteria and fabrication process of low-cost, high-performance microwave flexible and stretchable passive elements including inductors, capacitors and filters on flexible substrate and characterizations of fabricated or simulated devices. Aiming at low-cost, environmentally friendly flexible microwave passive devices, the high-performance flexible microwave lumped inductors, capacitors, and filters on biodegradable Cellulose nanofibril (CNF) substrates are presented in chapter 2. The spiral inductor with a resonance frequency of 29.8 GHz and quality (Q) factor of 8.5 and a metal-insulator-metal (MIM) capacitor with a resonance frequency of 45 GHz and quality (Q) factor of 85.2 were fabricated and transferred to a 200 μm thick CNF substrate. A 5 GHz band-stop filter and a 4 GHz band-pass filter were fabricated based on the spiral inductor and MIM capacitor. The passive components and filters exhibit outstanding mechanical bendability, which has negligible performance changes under bending radius as small as 15 mm. To fulfill the increasing demand of high frequency (RF) for wireless communication purposes, it is necessary to develop essential flexible, stretchable radiofrequency components. Chapter 3 exhibits the studies on stretchable passive components, including capacitors and filters design. Different designs of stretchable geometry for signal traces, such as the horseshoe, rectangle, sin function, and ground traces, including the serpentine line and Moore curve, were discussed. A stretchable parallel metal-insulator-metal (MIM) capacitor with a resonance frequency of 6.1 GHz and quality factor of 40 was designed on Ecoflex substrate. A 2.7 GHz band-pass filter with an insertion loss of -0.3dB consisting of a spiral inductor and stretchable parallel capacitors was also introduced. The feasible fabrication process is discussed, and the device could be transferred to the desired biocompatible stretchable substrate depending on the application requirements. Ultrathin oxides (UOs) acting as an interfacial layer between p-type semiconductors and n-type GaN has become a curial part of forming lattice-mismatch heterojunctions. Several studies have investigated the influences of UO oxides on the Ga-face GaN surface band-bending. Chapter 4 discussed the characterization on band-bending of UO ZrO2 deposited by ALD on the c-plane, Ga-face GaN surface. The x-ray photoelectron spectroscopy measurements were performed to acquire the band-bending properties on the GaN surface with different thicknesses of UO ZrO2. The XPS spectra were analyzed to derive the oxide bandgap, band bending, valence band offset (VBO), and conduction band offsets (CBO) for different ZrO¬2 coating situations for the GaN sample.

ISBN: 9798363515262Subjects--Topical Terms:

454503
Electrical engineering.
Subjects--Index Terms:

Microwave electronics

Flexible and Stretchable Lumped Microwave Passive Components and Filters and Interfacial Band-Bending Parameters of ALD Ultrathin ZrO2 on c-Plane, Ga-Face GaN Through XPS Measurements.
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506 $a This item must not be added to any third party search indexes.
520 $a Flexible and stretchable microwave electronics have attracted mounting interests and have been investigated in many emerging fields with their capabilities of forming light weighted, robust, and bendable circuits. There are a large variety of flexible and stretchable design towards different potential applications, such as flexible displays, electronic tags, solar cells, and medical devices. However, microwave electronics in mechanically flexible or stretchable cannot be easily addressed by traditional rigid microwave electronics techniques, which need take flexible substrates with both excellent microwave properties including low resistive loss and low tangent loss and bendability parameters into considerations. This dissertation studies the design criteria and fabrication process of low-cost, high-performance microwave flexible and stretchable passive elements including inductors, capacitors and filters on flexible substrate and characterizations of fabricated or simulated devices. Aiming at low-cost, environmentally friendly flexible microwave passive devices, the high-performance flexible microwave lumped inductors, capacitors, and filters on biodegradable Cellulose nanofibril (CNF) substrates are presented in chapter 2. The spiral inductor with a resonance frequency of 29.8 GHz and quality (Q) factor of 8.5 and a metal-insulator-metal (MIM) capacitor with a resonance frequency of 45 GHz and quality (Q) factor of 85.2 were fabricated and transferred to a 200 μm thick CNF substrate. A 5 GHz band-stop filter and a 4 GHz band-pass filter were fabricated based on the spiral inductor and MIM capacitor. The passive components and filters exhibit outstanding mechanical bendability, which has negligible performance changes under bending radius as small as 15 mm. To fulfill the increasing demand of high frequency (RF) for wireless communication purposes, it is necessary to develop essential flexible, stretchable radiofrequency components. Chapter 3 exhibits the studies on stretchable passive components, including capacitors and filters design. Different designs of stretchable geometry for signal traces, such as the horseshoe, rectangle, sin function, and ground traces, including the serpentine line and Moore curve, were discussed. A stretchable parallel metal-insulator-metal (MIM) capacitor with a resonance frequency of 6.1 GHz and quality factor of 40 was designed on Ecoflex substrate. A 2.7 GHz band-pass filter with an insertion loss of -0.3dB consisting of a spiral inductor and stretchable parallel capacitors was also introduced. The feasible fabrication process is discussed, and the device could be transferred to the desired biocompatible stretchable substrate depending on the application requirements. Ultrathin oxides (UOs) acting as an interfacial layer between p-type semiconductors and n-type GaN has become a curial part of forming lattice-mismatch heterojunctions. Several studies have investigated the influences of UO oxides on the Ga-face GaN surface band-bending. Chapter 4 discussed the characterization on band-bending of UO ZrO2 deposited by ALD on the c-plane, Ga-face GaN surface. The x-ray photoelectron spectroscopy measurements were performed to acquire the band-bending properties on the GaN surface with different thicknesses of UO ZrO2. The XPS spectra were analyzed to derive the oxide bandgap, band bending, valence band offset (VBO), and conduction band offsets (CBO) for different ZrO¬2 coating situations for the GaN sample.
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