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有關三閘極金半場效電晶體和三閘極具負交疊通道金氧半場效電晶體之次臨界行為...

國立高雄大學電機工程學系碩博士班

有關三閘極金半場效電晶體和三閘極具負交疊通道金氧半場效電晶體之次臨界行為與其應用於次臨界邏輯電路之解析模型 = Analytical Subthreshold Behavior Model of Triple-Gate MESFETs and Triple-Gate Underlap MOSFETs and Its Application for the Evaluation of Subthreshold Logic Gate

Record Type:	Language materials, printed : monographic
Paralel Title:	Analytical Subthreshold Behavior Model of Triple-Gate MESFETs and Triple-Gate Underlap MOSFETs and Its Application for the Evaluation of Subthreshold Logic Gate
Author:	鍾侑廷,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	高雄市
Published:	國立高雄大學;
Year of Publication:	2023[民112]
Description:	x,100葉圖 : 30公分;
Subject:	次臨界行為
Subject:	Subthreshold behavior
Online resource:	https://handle.ncl.edu.tw/11296/75t5m3
Notes:	112年12月1日公開
Notes:	參考書目: 葉97-98

有關三閘極金半場效電晶體和三閘極具負交疊通道金氧半場效電晶體之次臨界行為與其應用於次臨界邏輯電路之解析模型 = Analytical Subthreshold Behavior Model of Triple-Gate MESFETs and Triple-Gate Underlap MOSFETs and Its Application for the Evaluation of Subthreshold Logic Gate
鍾, 侑廷

有關三閘極金半場效電晶體和三閘極具負交疊通道金氧半場效電晶體之次臨界行為與其應用於次臨界邏輯電路之解析模型 = Analytical Subthreshold Behavior Model of Triple-Gate MESFETs and Triple-Gate Underlap MOSFETs and Its Application for the Evaluation of Subthreshold Logic Gate / 鍾侑廷撰 - 高雄市 : 國立高雄大學, 2023[民112]. - x,100葉 ; 圖 ; 30公分.
112年12月1日公開參考書目: 葉97-98.
次臨界行為Subthreshold behavior

有關三閘極金半場效電晶體和三閘極具負交疊通道金氧半場效電晶體之次臨界行為與其應用於次臨界邏輯電路之解析模型 = Analytical Subthreshold Behavior Model of Triple-Gate MESFETs and Triple-Gate Underlap MOSFETs and Its Application for the Evaluation of Subthreshold Logic Gate
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