國立高雄大學圖資館 |

Language: English

Back

HEMT technology and applications

Record Type:	Electronic resources : Monograph/item
Title/Author:	HEMT technology and applicationsedited by Trupti Ranjan Lenka, Hieu Pham Trung Nguyen.
other author:	Lenka, Trupti Ranjan.
Published:	Singapore :Springer Nature Singapore :2023.
Description:	x, 245 p. :ill. (chiefly color), digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Modulation-doped field-effect transistors.
Online resource:	https://doi.org/10.1007/978-981-19-2165-0
ISBN:	9789811921650$q(electronic bk.)

HEMT technology and applications
HEMT technology and applications[electronic resource] /edited by Trupti Ranjan Lenka, Hieu Pham Trung Nguyen. - Singapore :Springer Nature Singapore :2023. - x, 245 p. :ill. (chiefly color), digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

Operation Principle of AlGaN/GaN HEMT -- Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications -- RF and Microwave Characteristics of AlGaN/AlN/GaN HEMT for 5G Communication.

This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.

ISBN: 9789811921650$q(electronic bk.)

Standard No.: 10.1007/978-981-19-2165-0doiSubjects--Topical Terms:

200535
Modulation-doped field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

HEMT technology and applications
LDR:02414nmm a2200337 a 4500 001 644912
003 DE-He213
005 20220623022230.0
006 m d
007 cr nn 008maaau
008 231208s2023 si s 0 eng d
020 $a 9789811921650$q(electronic bk.)
020 $a 9789811921643$q(paper)
024 7 $a 10.1007/978-981-19-2165-0 $2 doi
035 $a 978-981-19-2165-0
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .H492 2023
245 0 0 $a HEMT technology and applications $h [electronic resource] / $c edited by Trupti Ranjan Lenka, Hieu Pham Trung Nguyen.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2023.
300 $a x, 245 p. : $b ill. (chiefly color), digital ; $c 24 cm.
490 1 $a Springer tracts in electrical and electronics engineering, $x 2731-4219
505 0 $a Operation Principle of AlGaN/GaN HEMT -- Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications -- RF and Microwave Characteristics of AlGaN/AlN/GaN HEMT for 5G Communication.
520 $a This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
650 0 $a Modulation-doped field-effect transistors. $3 200535
650 1 4 $a Electronic Circuits and Systems. $3 913394
650 2 4 $a Cyber-Physical Systems. $3 919034
700 1 $a Lenka, Trupti Ranjan. $3 917456
700 1 $a Nguyen, Hieu Pham Trung. $3 953632
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
830 0 $a Springer tracts in electrical and electronics engineering. $3 922010
856 4 0 $u https://doi.org/10.1007/978-981-19-2165-0
950 $a Engineering (SpringerNature-11647)