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雙材質三閘極金氧半場效電晶體及三閘極金氧半場效電晶體彈道效應之次臨界行為...

國立高雄大學電機工程學系碩博士班

雙材質三閘極金氧半場效電晶體及三閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits

Record Type:	Language materials, printed : monographic
Paralel Title:	Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits
Author:	林肇威,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	高雄市
Published:	國立高雄大學;
Year of Publication:	2024[民113]
Description:	xv,108面圖 : 30公分;
Subject:	短通道效應
Subject:	Short-channel effect
Online resource:	https://handle.ncl.edu.tw/11296/jymy5m
Notes:	113年11月15日公開
Notes:	參考書目: 面105-106

雙材質三閘極金氧半場效電晶體及三閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits
林, 肇威

雙材質三閘極金氧半場效電晶體及三閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits / 林肇威撰 - 高雄市 : 國立高雄大學, 2024[民113]. - xv,108面 ; 圖 ; 30公分.
113年11月15日公開參考書目: 面105-106.
短通道效應Short-channel effect

雙材質三閘極金氧半場效電晶體及三閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 = Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits
LDR:01461pam0a2200277 450 001 657640
005 20250213091348.0
010 0 $b 精裝
010 0 $b 平裝
099 $a 112NUK00442010
100 $a 20240912y2024 k y0chiy50 b
101 0 $a eng $d eng $d chi
102 $a tw
105 $a a am 000yy
200 1 $a 雙材質三閘極金氧半場效電晶體及三閘極金氧半場效電晶體彈道效應之次臨界行為研究與其次臨界邏輯電路之應用 $d Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits $z eng $f 林肇威撰
210 $a 高雄市 $c 國立高雄大學 $d 2024[民113]
215 0 $a xv,108面 $c 圖 $d 30公分
300 $a 113年11月15日公開
300 $a 參考書目: 面105-106
314 $a 指導教授: 江德光博士
328 $a 碩士論文--國立高雄大學電機工程學系碩博士班
510 1 $a Analytical Subthreshold Behavior of Dual-Material Triple-Gate MOSFETs and Triple-Gate MOSFETs with Ballistic Effects and Its Applications in Subthreshold Logic Circuits $z eng
610 0 $a 短通道效應 $a 三閘極 $a 次臨界行為 $a 熱載子效應 $a 彈道效應
610 1 $a Short-channel effect $a Multiple-gate $a Subthreshold behavior $a Hot carrier effect $a Ballistic effect
681 $a 008M/0019 $b 542201 4435.2 $v 2007年版
700 1 $a 林 $b 肇威 $4 撰 $3 968644
712 0 2 $a 國立高雄大學 $b 電機工程學系碩博士班 $3 769000
801 0 $a tw $b NUK $c 20240910 $g CCR
856 4 $u https://handle.ncl.edu.tw/11296/jymy5m $z 電子資源