國立高雄大學圖資館 |

登入

回首頁

Beyond Si-based CMOS devicesmaterials to architecture /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Beyond Si-based CMOS devicesedited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan.
其他題名:	materials to architecture /
其他作者:	Singh, Sangeeta.
出版者:	Singapore :Springer Nature Singapore :2024.
面頁冊數:	xiv, 326 p. :ill. (chiefly col.), digital ;24 cm.
Contained By:	Springer Nature eBook
標題:	Metal oxide semiconductors, Complementary.
電子資源:	https://doi.org/10.1007/978-981-97-4623-1
ISBN:	9789819746231$q(electronic bk.)

Beyond Si-based CMOS devicesmaterials to architecture /
Beyond Si-based CMOS devicesmaterials to architecture /[electronic resource] :edited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan. - Singapore :Springer Nature Singapore :2024. - xiv, 326 p. :ill. (chiefly col.), digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour.

This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.

ISBN: 9789819746231$q(electronic bk.)

Standard No.: 10.1007/978-981-97-4623-1doiSubjects--Topical Terms:

184467
Metal oxide semiconductors, Complementary.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 537.6223

Beyond Si-based CMOS devicesmaterials to architecture /
LDR:02709nmm a22003495a 4500 001 668001
003 DE-He213
005 20240903130456.0
006 m d
007 cr nn 008maaau
008 250107s2024 si s 0 eng d
020 $a 9789819746231$q(electronic bk.)
020 $a 9789819746224$q(paper)
024 7 $a 10.1007/978-981-97-4623-1 $2 doi
035 $a 978-981-97-4623-1
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.99.M44
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 537.6223 $2 23
090 $a TK7871.99.M44 $b B573 2024
245 0 0 $a Beyond Si-based CMOS devices $h [electronic resource] : $b materials to architecture / $c edited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2024.
300 $a xiv, 326 p. : $b ill. (chiefly col.), digital ; $c 24 cm.
347 $a text file $b PDF $2 rda
490 1 $a Springer tracts in electrical and electronics engineering, $x 2731-4219
505 0 $a Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour.
520 $a This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices.
650 0 $a Metal oxide semiconductors, Complementary. $3 184467
650 0 $a Silicon. $3 190394
650 0 $a Nanostructured materials. $3 216041
650 1 4 $a Electronic Circuits and Systems. $3 913394
650 2 4 $a Processor Architectures. $3 274498
650 2 4 $a Materials for Devices. $3 918939
700 1 $a Singh, Sangeeta. $3 894970
700 1 $a Sharma, Shashi Kant. $3 980883
700 1 $a Nandan, Durgesh. $3 980884
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
830 0 $a Springer tracts in electrical and electronics engineering. $3 922010
856 4 0 $u https://doi.org/10.1007/978-981-97-4623-1
950 $a Engineering (SpringerNature-11647)