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Exploring Hydrogen Impurities and Their Interactions in Ga2O3 and SnO2 /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Exploring Hydrogen Impurities and Their Interactions in Ga2O3 and SnO2 /Andrew Venzie.
Author:	Venzie, Andrew,
Description:	1 electronic resource (112 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-01, Section: B.
Notes:	Advisors: Stavola, Michael Committee members: Biaggio, Ivan; Fowler, W. Beall; Strandwitz, Nicholas; Ekuma, Chinedu.
Contained By:	Dissertations Abstracts International86-01B.
Subject:	Physics.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31142174
ISBN:	9798383200261

Exploring Hydrogen Impurities and Their Interactions in Ga2O3 and SnO2 /
Venzie, Andrew,

Exploring Hydrogen Impurities and Their Interactions in Ga2O3 and SnO2 /Andrew Venzie. - 1 electronic resource (112 pages)

Source: Dissertations Abstracts International, Volume: 86-01, Section: B.

Hydrogen has been found in previous studies to be an n-type dopant in Ga2O3 and SnO2 that gives rise to unexpected changes in conductivity, Hydrogen passivates shallow donor and acceptor impurities in conventional semiconductors by acting as an acceptor in n-type materials and a donor in p-type materials. However, in semiconducting oxides H can act as an n-type dopant and act as a source of conductivity. Fourier Transform Infrared (FTIR) spectroscopy is a powerful tool for studying the vibrational properties of hydrogen-related defects in semiconductors, and can reveal information about the microscopic structure, atomic composition, and thermal stability of a defect.The beta phase of Ga2O3 has a monoclinic crystal structure and touts an ultrawide bandgap energy of 4.9 eV. Infrared (IR) lines observed in β-Ga2O3 at 2540, 2547, 2577, and 2585 cm-1 have been assigned to a Ge-D complex, a VGa-2D center, a Si-D complex, and an Fe-D complex respectively with corresponding H frequencies at 3425, 3447, 3477, and 3490 cm-1 respectively, We have performed experiments to help assign the various O-H and O-D lines to specific impurity complexes. Using the experimental data presented in this dissertation and previous work done by others, Professor Fowler has presented plausible models for the OD-impurity complexes investigated here based on a VGa(1) perturbed by an additional impurity.The alpha phase of Ga2O3, boasts a bandgap energy of 5.3 eV. surpassing the band gap of the beta phase. An epilayer of α-Ga2O3 was grown with a sapphire substrate since they share a similar corundum crystal structure. Our α-Ga2O3 samples have been implanted with either H. D or both H and D. IR lines have been observed at 2431, 2440, and 2472 cm-1. The line at 2431 cm-1 assigned to an OD-VGa complex in α-Ga2O3. The line at 2440 cm-1 has been is due to an OD-VAl complex in the sapphire substrate. The thermal stabilities of the three lines have also been studied. Putting our results together with an accumulation of prior theoretical and experimental work by others had helped us to proрове plausible defect structures and assignments for the observed IR lines.The last material investigated in this dissertation is SnO2 which has a rutile crystal structure. The H present in the IR line at 3156 cm-1 has been observed previously to be mobile at room temperature on the timescale of weeks. We investigated the diffusion of H and determined an activation energy of 0.53 0.05 eV from a plot of In(k) vs T-1. Plotting the fraction of the initial defects annealed at early times with the square root of time yielded an activation energy of 0.45± 0.06 eV. Studies done with TiO2, which shares the same rutile structure as SnO2, show a pathway for H to diffuse along the c-axis that we agree with.

English

ISBN: 9798383200261Subjects--Topical Terms:

179414
Physics.
Subjects--Index Terms:

Fourier Transform Infrared spectroscopy

Exploring Hydrogen Impurities and Their Interactions in Ga2O3 and SnO2 /
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520 $a Hydrogen has been found in previous studies to be an n-type dopant in Ga2O3 and SnO2 that gives rise to unexpected changes in conductivity, Hydrogen passivates shallow donor and acceptor impurities in conventional semiconductors by acting as an acceptor in n-type materials and a donor in p-type materials. However, in semiconducting oxides H can act as an n-type dopant and act as a source of conductivity. Fourier Transform Infrared (FTIR) spectroscopy is a powerful tool for studying the vibrational properties of hydrogen-related defects in semiconductors, and can reveal information about the microscopic structure, atomic composition, and thermal stability of a defect.The beta phase of Ga2O3 has a monoclinic crystal structure and touts an ultrawide bandgap energy of 4.9 eV. Infrared (IR) lines observed in β-Ga2O3 at 2540, 2547, 2577, and 2585 cm-1 have been assigned to a Ge-D complex, a VGa-2D center, a Si-D complex, and an Fe-D complex respectively with corresponding H frequencies at 3425, 3447, 3477, and 3490 cm-1 respectively, We have performed experiments to help assign the various O-H and O-D lines to specific impurity complexes. Using the experimental data presented in this dissertation and previous work done by others, Professor Fowler has presented plausible models for the OD-impurity complexes investigated here based on a VGa(1) perturbed by an additional impurity.The alpha phase of Ga2O3, boasts a bandgap energy of 5.3 eV. surpassing the band gap of the beta phase. An epilayer of α-Ga2O3 was grown with a sapphire substrate since they share a similar corundum crystal structure. Our α-Ga2O3 samples have been implanted with either H. D or both H and D. IR lines have been observed at 2431, 2440, and 2472 cm-1. The line at 2431 cm-1 assigned to an OD-VGa complex in α-Ga2O3. The line at 2440 cm-1 has been is due to an OD-VAl complex in the sapphire substrate. The thermal stabilities of the three lines have also been studied. Putting our results together with an accumulation of prior theoretical and experimental work by others had helped us to proрове plausible defect structures and assignments for the observed IR lines.The last material investigated in this dissertation is SnO2 which has a rutile crystal structure. The H present in the IR line at 3156 cm-1 has been observed previously to be mobile at room temperature on the timescale of weeks. We investigated the diffusion of H and determined an activation energy of 0.53 0.05 eV from a plot of In(k) vs T-1. Plotting the fraction of the initial defects annealed at early times with the square root of time yielded an activation energy of 0.45± 0.06 eV. Studies done with TiO2, which shares the same rutile structure as SnO2, show a pathway for H to diffuse along the c-axis that we agree with.
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653 $a Gallium oxide
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