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The BaSIC topologya revolutionary power device control strategy /

Record Type:	Electronic resources : Monograph/item
Title/Author:	The BaSIC topologyby B. Jayant Baliga, Ajit Kanale.
Reminder of title:	a revolutionary power device control strategy /
Author:	Baliga, B. Jayant.
other author:	Kanale, Ajit.
Published:	Cham :Springer Nature Switzerland :2025.
Description:	xxii, 316 p. :ill. (chiefly color), digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Power semiconductors.
Online resource:	https://doi.org/10.1007/978-3-031-86630-2
ISBN:	9783031866302$q(electronic bk.)

The BaSIC topologya revolutionary power device control strategy /
Baliga, B. Jayant.

The BaSIC topologya revolutionary power device control strategy /[electronic resource] :by B. Jayant Baliga, Ajit Kanale. - Cham :Springer Nature Switzerland :2025. - xxii, 316 p. :ill. (chiefly color), digital ;24 cm.

Introduction -- Short-circuit withstand capability -- Conventional current sensing in devices -- The BaSIC topology concept -- Application of the BaSIC Topology to Si IGBTs -- Application of the BaSIC Topology to SiC Power MOSFETs -- Application of the BaSIC Topology to GaN HEMT devices -- Current Sensing using the BaSIC Topology -- Eliminating repetitive short-circuit failure using the BaSIC Topology -- Avalanche ruggedness of the BaSIC Topology to GaN HEMT devices -- Optimization of Silicon Depletion-Mode MOSFETs for the BaSIC Topology -- Selection Methodology for Silicon Enhancement-Mode MOSFETs for the BaSIC Topology -- Comparison of the BaSIC Topology to the conventional DESAT topology -- Synopsys.

The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives. Introduces the BaSIC topology - a revolutionary new approach for the control of power devices; Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices; Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept.

ISBN: 9783031866302$q(electronic bk.)

Standard No.: 10.1007/978-3-031-86630-2doiSubjects--Topical Terms:

197819
Power semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

The BaSIC topologya revolutionary power device control strategy /
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505 0 $a Introduction -- Short-circuit withstand capability -- Conventional current sensing in devices -- The BaSIC topology concept -- Application of the BaSIC Topology to Si IGBTs -- Application of the BaSIC Topology to SiC Power MOSFETs -- Application of the BaSIC Topology to GaN HEMT devices -- Current Sensing using the BaSIC Topology -- Eliminating repetitive short-circuit failure using the BaSIC Topology -- Avalanche ruggedness of the BaSIC Topology to GaN HEMT devices -- Optimization of Silicon Depletion-Mode MOSFETs for the BaSIC Topology -- Selection Methodology for Silicon Enhancement-Mode MOSFETs for the BaSIC Topology -- Comparison of the BaSIC Topology to the conventional DESAT topology -- Synopsys.
520 $a The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives. Introduces the BaSIC topology - a revolutionary new approach for the control of power devices; Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices; Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept.
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