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Cmos plasma and process damage

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Cmos plasma and process damageby Kirk Prall.
作者:	Prall, Kirk.
出版者:	Cham :Springer Nature Switzerland :2025.
面頁冊數:	xix, 466 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer Nature eBook
標題:	Metal oxide semiconductors, Complementary.
電子資源:	https://doi.org/10.1007/978-3-031-89029-1
ISBN:	9783031890291$q(electronic bk.)

Cmos plasma and process damage
Prall, Kirk.

Cmos plasma and process damage[electronic resource] /by Kirk Prall. - Cham :Springer Nature Switzerland :2025. - xix, 466 p. :ill. (some col.), digital ;24 cm.

Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.

This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.

ISBN: 9783031890291$q(electronic bk.)

Standard No.: 10.1007/978-3-031-89029-1doiSubjects--Topical Terms:

184467
Metal oxide semiconductors, Complementary.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 537.6223

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505 0 $a Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.
520 $a This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.
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