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Modeling of AlGaN/GaN high electron mobility transistors

Record Type:	Electronic resources : Monograph/item
Title/Author:	Modeling of AlGaN/GaN high electron mobility transistorsedited by D. Nirmal, J. Ajayan.
other author:	D., Nirmal.
Published:	Singapore :Springer Nature Singapore :2025.
Description:	xii, 261 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Modulation-doped field-effect transistors.
Online resource:	https://doi.org/10.1007/978-981-97-7506-4
ISBN:	9789819775064$q(electronic bk.)

Modeling of AlGaN/GaN high electron mobility transistors
Modeling of AlGaN/GaN high electron mobility transistors[electronic resource] /edited by D. Nirmal, J. Ajayan. - Singapore :Springer Nature Singapore :2025. - xii, 261 p. :ill. (some col.), digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.

ISBN: 9789819775064$q(electronic bk.)

Standard No.: 10.1007/978-981-97-7506-4doiSubjects--Topical Terms:

200535
Modulation-doped field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Modeling of AlGaN/GaN high electron mobility transistors
LDR:02437nmm a2200337 a 4500 001 679103
003 DE-He213
005 20241224115255.0
006 m o d
007 cr nn 008maaau
008 251031s2025 si s 0 eng d
020 $a 9789819775064$q(electronic bk.)
020 $a 9789819775057$q(paper)
024 7 $a 10.1007/978-981-97-7506-4 $2 doi
035 $a 978-981-97-7506-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .M689 2025
245 0 0 $a Modeling of AlGaN/GaN high electron mobility transistors $h [electronic resource] / $c edited by D. Nirmal, J. Ajayan.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2025.
300 $a xii, 261 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer tracts in electrical and electronics engineering, $x 2731-4219
505 0 $a Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.
520 $a This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
650 0 $a Modulation-doped field-effect transistors. $3 200535
650 0 $a Gallium nitride. $3 210966
650 1 4 $a Electronic Circuits and Systems. $3 913394
650 2 4 $a Cyber-Physical Systems. $3 919034
650 2 4 $a Electronic Devices. $3 913118
650 2 4 $a Electronic Materials. $3 918930
700 1 $a D., Nirmal. $3 992271
700 1 $a J., Ajayan. $3 992272
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
830 0 $a Springer tracts in electrical and electronics engineering. $3 922010
856 4 0 $u https://doi.org/10.1007/978-981-97-7506-4
950 $a Engineering (SpringerNature-11647)