國立高雄大學圖資館 |

Language: English

Back

Bulk-driven circuit techniques for CMOS FDSOI processesfrom circuit concept to implementations /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Bulk-driven circuit techniques for CMOS FDSOI processesedited by Friedel Gerfers.
Reminder of title:	from circuit concept to implementations /
other author:	Gerfers, F.
Published:	Cham :Springer Nature Switzerland :2025.
Description:	xxxv, 237 p. :ill. (chiefly col.), digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Electronic circuit design.
Online resource:	https://doi.org/10.1007/978-3-031-85114-8
ISBN:	9783031851148$q(electronic bk.)

Bulk-driven circuit techniques for CMOS FDSOI processesfrom circuit concept to implementations /
Bulk-driven circuit techniques for CMOS FDSOI processesfrom circuit concept to implementations /[electronic resource] :edited by Friedel Gerfers. - Cham :Springer Nature Switzerland :2025. - xxxv, 237 p. :ill. (chiefly col.), digital ;24 cm.

Chapter 1. Common-Source Amplifier Feedback using Back-Gate Transconductance -- Chapter 2. Transconductance Amplifier Linearization using Active Back-Gate Input Signal Injection -- Chapter 3. A Gain-enhanced Inverter-based OTA Employing Active Body-Bias Feedback -- Chapter 4. Ultra Low-Power Voltage-Mode VCSEL-Driver with Back-Gate Bias Tuning -- Chapter 5. Maximizing the Figures of Merit, Temperature Range, and Optimizing the Algorithmic Design Methodologies Based on Constant Current Density Bias for FDSOI Analog-Mixed-Signal, Digital, mm-Wave, and Fibreoptic Circuits from the Back-Gate Voltage -- Chapter 6. A Back-Gate Linearization Technique for Current-Steering DACs -- Chapter 7. Highly-Linear T&H-Amplifiers Utilizing Bandwidth Boosting for Time-Interleaved ADCs -- Chapter 8. High-Speed Flash ADC using Bulk-Driven Flash Reference Generation Technique -- Chapter 9. RF Switches in CMOS FDSOI Process - from Circuit Concepts to Implementation -- Chapter 10. Variable Gain-Control with Bulk Biasing in mmW Amplifier.

In the contemporary technology landscape dominated by digital-centric systems and applications, the significance of analog front-end signal processing remains indispensable. The precision and performance of critical analog, mixed-signal or mm-wave components such as low-noise amplifiers, equalizers, and data converters are fundamentally determined by technological parameters, such as transconductance, DC gain, device matching, linearity, and timing accuracy, among others. Enhancing these parameters through intrinsic design improvements presents a significant challenge and becomes infeasible beyond certain limits with state-of-the-art circuit design techniques. As the performance of CMOS transistors is fundamentally constrained, foreground or background calibration schemes are commonly employed to mitigate the limitations of MOS devices. However, these constraints can be effectively addressed through the implementation of active and passive bulk-driven circuits enabled by silicon-on-insulator (SOI) CMOS technologies. Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technologies offer superior transistor characteristics compared to standard bulk CMOS technology, providing enhanced electrical performance, improved power efficiency, and better scalability. This book offers a comprehensive analysis of FD-SOI CMOS technology, presenting key innovations in design methodologies and circuit implementations adopting bulk-biasing techniques across analog, digital, mixed-signal, and mmWave circuits and systems. It addresses critical transistor limitations, including finite transistor gain, offset, mismatch, noise and linearity, among others. The authors provide detailed technical insights, mathematical modelling, design approaches and circuit realizations covering circuit advances using both static and dynamic transistor body-biasing techniques. Emphasis is placed on overcoming state-of-the-art circuit limitations such as finite DC gain, bandwidth, matching/accuracy and power efficiency. These performance metrics are rigorously investigated through mathematical modelling, validated through simulation and experimentally demonstrated using both dynamic and static body-biasing architectures. An essential guide for innovations using dynamic and static transistor body-biasing techniques; Describes FD-SOI CMOS bulk physics incl. the impact on technology parameters; Presents advanced active and passive body-biasing design methods.

ISBN: 9783031851148$q(electronic bk.)

Standard No.: 10.1007/978-3-031-85114-8doiSubjects--Topical Terms:

182267
Electronic circuit design.

LC Class. No.: TK7867

Dewey Class. No.: 621.3815

Bulk-driven circuit techniques for CMOS FDSOI processesfrom circuit concept to implementations /
LDR:04513nmm a2200325 a 4500 001 682732
003 DE-He213
005 20250723130302.0
006 m d
007 cr nn 008maaau
008 251209s2025 sz s 0 eng d
020 $a 9783031851148$q(electronic bk.)
020 $a 9783031851131$q(paper)
024 7 $a 10.1007/978-3-031-85114-8 $2 doi
035 $a 978-3-031-85114-8
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7867
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
090 $a TK7867 $b .B934 2025
245 0 0 $a Bulk-driven circuit techniques for CMOS FDSOI processes $h [electronic resource] : $b from circuit concept to implementations / $c edited by Friedel Gerfers.
260 $a Cham : $b Springer Nature Switzerland : $b Imprint: Springer, $c 2025.
300 $a xxxv, 237 p. : $b ill. (chiefly col.), digital ; $c 24 cm.
505 0 $a Chapter 1. Common-Source Amplifier Feedback using Back-Gate Transconductance -- Chapter 2. Transconductance Amplifier Linearization using Active Back-Gate Input Signal Injection -- Chapter 3. A Gain-enhanced Inverter-based OTA Employing Active Body-Bias Feedback -- Chapter 4. Ultra Low-Power Voltage-Mode VCSEL-Driver with Back-Gate Bias Tuning -- Chapter 5. Maximizing the Figures of Merit, Temperature Range, and Optimizing the Algorithmic Design Methodologies Based on Constant Current Density Bias for FDSOI Analog-Mixed-Signal, Digital, mm-Wave, and Fibreoptic Circuits from the Back-Gate Voltage -- Chapter 6. A Back-Gate Linearization Technique for Current-Steering DACs -- Chapter 7. Highly-Linear T&H-Amplifiers Utilizing Bandwidth Boosting for Time-Interleaved ADCs -- Chapter 8. High-Speed Flash ADC using Bulk-Driven Flash Reference Generation Technique -- Chapter 9. RF Switches in CMOS FDSOI Process - from Circuit Concepts to Implementation -- Chapter 10. Variable Gain-Control with Bulk Biasing in mmW Amplifier.
520 $a In the contemporary technology landscape dominated by digital-centric systems and applications, the significance of analog front-end signal processing remains indispensable. The precision and performance of critical analog, mixed-signal or mm-wave components such as low-noise amplifiers, equalizers, and data converters are fundamentally determined by technological parameters, such as transconductance, DC gain, device matching, linearity, and timing accuracy, among others. Enhancing these parameters through intrinsic design improvements presents a significant challenge and becomes infeasible beyond certain limits with state-of-the-art circuit design techniques. As the performance of CMOS transistors is fundamentally constrained, foreground or background calibration schemes are commonly employed to mitigate the limitations of MOS devices. However, these constraints can be effectively addressed through the implementation of active and passive bulk-driven circuits enabled by silicon-on-insulator (SOI) CMOS technologies. Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technologies offer superior transistor characteristics compared to standard bulk CMOS technology, providing enhanced electrical performance, improved power efficiency, and better scalability. This book offers a comprehensive analysis of FD-SOI CMOS technology, presenting key innovations in design methodologies and circuit implementations adopting bulk-biasing techniques across analog, digital, mixed-signal, and mmWave circuits and systems. It addresses critical transistor limitations, including finite transistor gain, offset, mismatch, noise and linearity, among others. The authors provide detailed technical insights, mathematical modelling, design approaches and circuit realizations covering circuit advances using both static and dynamic transistor body-biasing techniques. Emphasis is placed on overcoming state-of-the-art circuit limitations such as finite DC gain, bandwidth, matching/accuracy and power efficiency. These performance metrics are rigorously investigated through mathematical modelling, validated through simulation and experimentally demonstrated using both dynamic and static body-biasing architectures. An essential guide for innovations using dynamic and static transistor body-biasing techniques; Describes FD-SOI CMOS bulk physics incl. the impact on technology parameters; Presents advanced active and passive body-biasing design methods.
650 0 $a Electronic circuit design. $3 182267
650 0 $a Metal oxide semiconductors, Complementary. $3 184467
650 1 4 $a Electronics Design and Verification. $3 919565
650 2 4 $a Embedded Systems. $3 919564
650 2 4 $a Materials for Devices. $3 918939
700 1 $a Gerfers, F. $3 996579
710 2 $a SpringerLink (Online service) $3 273601
773 0 $t Springer Nature eBook
856 4 0 $u https://doi.org/10.1007/978-3-031-85114-8
950 $a Engineering (SpringerNature-11647)