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Silicon Nanocrystals for Red and Near-Infrared Light Emitting Diodes /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Silicon Nanocrystals for Red and Near-Infrared Light Emitting Diodes /Abhishek Shashikant Chaudhari.
Author:	Chaudhari, Abhishek Shashikant,
Description:	1 electronic resource (115 pages)
Notes:	Source: Masters Abstracts International, Volume: 86-12.
Notes:	Advisors: Panthnai, Matthew G. Committee members: Hiller, Andrew C.; Roling, Luke T.
Contained By:	Masters Abstracts International86-12.
Subject:	Chemical engineering.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=32000856
ISBN:	9798286431403

Silicon Nanocrystals for Red and Near-Infrared Light Emitting Diodes /
Chaudhari, Abhishek Shashikant,

Silicon Nanocrystals for Red and Near-Infrared Light Emitting Diodes /Abhishek Shashikant Chaudhari. - 1 electronic resource (115 pages)

Source: Masters Abstracts International, Volume: 86-12.

Group IV semiconductor nanomaterials, particularly silicon (Si) and Germanium (Ge), have gained increasing attention in optoelectronics due to their tunable electronic and optical properties at the nanoscale. Among these, silicon nanocrystal (SiNC)-based light-emitting diodes (LEDs) offer a promising, silicon-compatible alternative to conventional III-V semiconductor LEDs. The introduction of quantum confinement effects in SiNCs enables bandgap widening and enhances radiative recombination, overcoming the indirect bandgap limitations of bulk silicon. As a result, SiNCs exhibit size-tunable photoluminescence across the visible and near-infrared spectrum, making them suitable for diverse applications. Despite this potential, achieving efficient electroluminescence in SiNC LEDs remains challenging due to low carrier mobility, charge trapping, and non-radiative recombination losses. Device performance is often limited by high turn-on voltages and low external quantum efficiency (EQE) compared to commercial GaN-based LEDs. Effective surface passive action and doping strategies are crucial to suppress defect states and improve carrier injection and transport. This study focuses on the synthesis, fabrication, and characterization of SiNC LEDs, exploring both traditional (ITO/HTL/SiNC/ETL/metal) and inverted device architectures. Techniques such as solution-processing, vapor deposition , and plasma-enhanced methods are utilized to optimize SiNC layers and improve charge transport. Recent developments, including ligand engineering and hybrid structures with organic or perovskite layers, show potential in enhancing device performance and stability. Beyond conventional lighting, SiNC LEDs offer advantages like CMOS compatibility, biocompatibility, and infrared emission, making them promising candidates for bio-imaging, optical communication, and integrated photonics. Continued advancements in material engineering and device design are essential to unlock the full potential of SiNC LEDs in next-generation optoelectronic technologies.

English

ISBN: 9798286431403Subjects--Topical Terms:

206267
Chemical engineering.
Subjects--Index Terms:

Germanium

Silicon Nanocrystals for Red and Near-Infrared Light Emitting Diodes /
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520 $a Group IV semiconductor nanomaterials, particularly silicon (Si) and Germanium (Ge), have gained increasing attention in optoelectronics due to their tunable electronic and optical properties at the nanoscale. Among these, silicon nanocrystal (SiNC)-based light-emitting diodes (LEDs) offer a promising, silicon-compatible alternative to conventional III-V semiconductor LEDs. The introduction of quantum confinement effects in SiNCs enables bandgap widening and enhances radiative recombination, overcoming the indirect bandgap limitations of bulk silicon. As a result, SiNCs exhibit size-tunable photoluminescence across the visible and near-infrared spectrum, making them suitable for diverse applications. Despite this potential, achieving efficient electroluminescence in SiNC LEDs remains challenging due to low carrier mobility, charge trapping, and non-radiative recombination losses. Device performance is often limited by high turn-on voltages and low external quantum efficiency (EQE) compared to commercial GaN-based LEDs. Effective surface passive action and doping strategies are crucial to suppress defect states and improve carrier injection and transport. This study focuses on the synthesis, fabrication, and characterization of SiNC LEDs, exploring both traditional (ITO/HTL/SiNC/ETL/metal) and inverted device architectures. Techniques such as solution-processing, vapor deposition , and plasma-enhanced methods are utilized to optimize SiNC layers and improve charge transport. Recent developments, including ligand engineering and hybrid structures with organic or perovskite layers, show potential in enhancing device performance and stability. Beyond conventional lighting, SiNC LEDs offer advantages like CMOS compatibility, biocompatibility, and infrared emission, making them promising candidates for bio-imaging, optical communication, and integrated photonics. Continued advancements in material engineering and device design are essential to unlock the full potential of SiNC LEDs in next-generation optoelectronic technologies.
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