國立高雄大學圖資館 |

Language: English

Back

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /T. Andrew Bowen.
Author:	Bowen, T. Andrew,
Description:	1 electronic resource (189 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 87-04, Section: B.
Notes:	Advisors: Robinson, Joshua Committee members: Mauro, John; Maria, Jon-Paul; Terrones, Mauricio; Law, Stephanie; Wetherington, Maxwell.
Contained By:	Dissertations Abstracts International87-04B.
Subject:	Furnaces.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=32289484
ISBN:	9798297666931

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /
Bowen, T. Andrew,

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /T. Andrew Bowen. - 1 electronic resource (189 pages)

Source: Dissertations Abstracts International, Volume: 87-04, Section: B.

Two-dimensional (2D) materials, characterized by their layered structure and unique electronic and optical properties, have emerged as promising candidates for next-generation optoelectronic and quantum devices. Among them, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), and two-dimensional metals exhibit extraordinary physical characteristics that can be harnessed for tunable electronic and optical applications. This thesis investigates novel synthesis approaches, intercalation strategies, and the integration of 2D materials to enhance their functionalities.The study introduces an innovative approach to synthesizing high-quality 2D MoS₂ films using solid-source chemical vapor deposition (SS-CVD) and metal-organic chemical vapor deposition (MOCVD). These techniques enable precise control over growth parameters, resulting in monolayer MoS₂ with minimal defects and high crystallinity. Additionally, the effects of rare-earth element doping on MoS₂ were explored to modify its optoelectronic properties. However, experimental findings reveal that cerium doping primarily influences surface morphology rather than achieving uniform lattice incorporation, highlighting the complexities of rare-earth doping in 2D materials.Beyond synthesis, this research addresses the challenge of achieving uniform, large-area intercalation of metals into epitaxial graphene (EG) to create stable 2D metal heterostructures. Confinement Heteroepitaxy (CHet) was employed to intercalate gallium and indium beneath graphene layers, significantly enhancing their optical and plasmonic properties. A novel tungsten foil-assisted CHet method was developed to mitigate gallium droplet formation during intercalation, ensuring a more uniform and reproducible process. Furthermore, an alternative sub-monolayer epitaxial graphene (sMEG) approach was introduced, demonstrating a pathway to atomically smooth surfaces, which are crucial for high-performance heterostructures.Environmental factors influencing graphene synthesis were also explored, revealing the impact of substrate morphology, hydrogen etching conditions, and chamber contamination on the quality of epitaxial graphene. Investigations into alternative etch chemistries for defect engineering confirmed the effectiveness of oxygen plasma while highlighting the potential of modified plasma treatments to optimize defect formation without compromising graphene's structural integrity.The findings of this research pave the way for scalable, high-quality synthesis of 2D materials, precise intercalation techniques, and tunable electronic and optical properties for advanced technological applications. By refining growth methods, optimizing intercalation processes, and leveraging defect engineering strategies, this work contributes to the broader integration of 2D materials into semiconductor, optoelectronic, and quantum computing technologies.

English

ISBN: 9798297666931Subjects--Topical Terms:

663642
Furnaces.

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /
LDR:04350nmm a22003853i 4500 001 693787
005 20260511063025.5
006 m o d
007 cr|nu||||||||
008 260819s2025 miu||||||m |||||||eng d
020 $a 9798297666931
035 $a (MiAaPQD)AAI32289484
035 $a (MiAaPQD)PennState19512tab5175
035 $a AAI32289484
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Bowen, T. Andrew, $e author. $3 1010471
245 1 0 $a Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components / $c T. Andrew Bowen.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2025
300 $a 1 electronic resource (189 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 87-04, Section: B.
500 $a Advisors: Robinson, Joshua Committee members: Mauro, John; Maria, Jon-Paul; Terrones, Mauricio; Law, Stephanie; Wetherington, Maxwell.
502 $b Ph.D. $c The Pennsylvania State University $d 2025.
520 $a Two-dimensional (2D) materials, characterized by their layered structure and unique electronic and optical properties, have emerged as promising candidates for next-generation optoelectronic and quantum devices. Among them, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), and two-dimensional metals exhibit extraordinary physical characteristics that can be harnessed for tunable electronic and optical applications. This thesis investigates novel synthesis approaches, intercalation strategies, and the integration of 2D materials to enhance their functionalities.The study introduces an innovative approach to synthesizing high-quality 2D MoS₂ films using solid-source chemical vapor deposition (SS-CVD) and metal-organic chemical vapor deposition (MOCVD). These techniques enable precise control over growth parameters, resulting in monolayer MoS₂ with minimal defects and high crystallinity. Additionally, the effects of rare-earth element doping on MoS₂ were explored to modify its optoelectronic properties. However, experimental findings reveal that cerium doping primarily influences surface morphology rather than achieving uniform lattice incorporation, highlighting the complexities of rare-earth doping in 2D materials.Beyond synthesis, this research addresses the challenge of achieving uniform, large-area intercalation of metals into epitaxial graphene (EG) to create stable 2D metal heterostructures. Confinement Heteroepitaxy (CHet) was employed to intercalate gallium and indium beneath graphene layers, significantly enhancing their optical and plasmonic properties. A novel tungsten foil-assisted CHet method was developed to mitigate gallium droplet formation during intercalation, ensuring a more uniform and reproducible process. Furthermore, an alternative sub-monolayer epitaxial graphene (sMEG) approach was introduced, demonstrating a pathway to atomically smooth surfaces, which are crucial for high-performance heterostructures.Environmental factors influencing graphene synthesis were also explored, revealing the impact of substrate morphology, hydrogen etching conditions, and chamber contamination on the quality of epitaxial graphene. Investigations into alternative etch chemistries for defect engineering confirmed the effectiveness of oxygen plasma while highlighting the potential of modified plasma treatments to optimize defect formation without compromising graphene's structural integrity.The findings of this research pave the way for scalable, high-quality synthesis of 2D materials, precise intercalation techniques, and tunable electronic and optical properties for advanced technological applications. By refining growth methods, optimizing intercalation processes, and leveraging defect engineering strategies, this work contributes to the broader integration of 2D materials into semiconductor, optoelectronic, and quantum computing technologies.
546 $a English
590 $a School code: 0176
650 4 $a Furnaces. $3 663642
650 4 $a Defects. $3 1010472
650 4 $a Gases. $3 194603
650 4 $a Electrodes. $3 197343
650 4 $a Spectrum analysis. $3 188665
650 4 $a Plasma etching. $3 225107
650 4 $a Microscopy. $3 189037
650 4 $a Chemical vapor deposition. $3 184282
650 4 $a Hydrogen. $3 265210
650 4 $a Sulfur. $3 667893
650 4 $a Graphene. $3 405119
650 4 $a Research & development--R&D. $3 942634
650 4 $a Gas flow. $3 199344
650 4 $a Contact angle. $3 814512
650 4 $a Nitrogen. $3 966967
650 4 $a Analytical chemistry. $3 708695
650 4 $a Materials science. $3 221779
650 4 $a Optics. $3 204142
690 $a 0486
690 $a 0794
690 $a 0752
710 2 $a The Pennsylvania State University. $3 212456
720 1 $a Robinson, Joshua $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 87-04B.
790 $a 0176
791 $a Ph.D.
792 $a 2025
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=32289484