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Photo-oxidation of hydrogen passivated silicon surfaces.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Photo-oxidation of hydrogen passivated silicon surfaces.
Author:	Morse, Kathleen Anne.
Description:	150 p.
Notes:	Adviser: Piero Pianetta.
Notes:	Source: Dissertation Abstracts International, Volume: 64-05, Section: B, page: 2347.
Contained By:	Dissertation Abstracts International64-05B.
Subject:	Engineering, Materials Science.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3090645
ISBN:	0496383671

Photo-oxidation of hydrogen passivated silicon surfaces.
Morse, Kathleen Anne.

Photo-oxidation of hydrogen passivated silicon surfaces. [electronic resource] - 150 p.

Adviser: Piero Pianetta.

Thesis (Ph.D.)--Stanford University, 2003.

Conventional and synchrotron photoelectron spectroscopy and a custom experimental setup are used to investigate how factors present in cleanrooms, including UV light, O2, and H2O, lead to contamination of the hydrogen passivated surface. Experimental results indicate that both the H-Si(111) and the Hx-Si(100) surfaces oxidize when exposed to UV light in the presence of O2 only, H2O only, or both O2 and H2O. We propose that UV light assists in the photo-oxidation of hydrogen terminated silicon surfaces by cleaving the H-Si bond. This process generates silicon surface radicals that can then be scavenged by either O2 to form Si-O-O· or by H2O to form Si-OH. Results also show that oxide contamination is most significant when the surface is exposed to both O2 and H2O (humid air) in the presence of UV light. In this humid air case, the water molecule is expected to more readily react with silicon surface radicals than the oxygen molecule. Polarization of the surface by the Si-OH bonding is thought to weaken the Si-Si backbond and make incorporation of oxygen, by O2, more energetically favorable. UV light also assist the oxidation process by providing the energy required for a successful electron transfer between the substrate and the O2 molecule. This electron transfer process creates reactive O2- species.

ISBN: 0496383671Subjects--Topical Terms:

226940
Engineering, Materials Science.

Photo-oxidation of hydrogen passivated silicon surfaces.
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245 1 0 $a Photo-oxidation of hydrogen passivated silicon surfaces. $h [electronic resource]
300 $a 150 p.
500 $a Adviser: Piero Pianetta.
500 $a Source: Dissertation Abstracts International, Volume: 64-05, Section: B, page: 2347.
502 $a Thesis (Ph.D.)--Stanford University, 2003.
520 # $a Conventional and synchrotron photoelectron spectroscopy and a custom experimental setup are used to investigate how factors present in cleanrooms, including UV light, O2, and H2O, lead to contamination of the hydrogen passivated surface. Experimental results indicate that both the H-Si(111) and the Hx-Si(100) surfaces oxidize when exposed to UV light in the presence of O2 only, H2O only, or both O2 and H2O. We propose that UV light assists in the photo-oxidation of hydrogen terminated silicon surfaces by cleaving the H-Si bond. This process generates silicon surface radicals that can then be scavenged by either O2 to form Si-O-O· or by H2O to form Si-OH. Results also show that oxide contamination is most significant when the surface is exposed to both O2 and H2O (humid air) in the presence of UV light. In this humid air case, the water molecule is expected to more readily react with silicon surface radicals than the oxygen molecule. Polarization of the surface by the Si-OH bonding is thought to weaken the Si-Si backbond and make incorporation of oxygen, by O2, more energetically favorable. UV light also assist the oxidation process by providing the energy required for a successful electron transfer between the substrate and the O2 molecule. This electron transfer process creates reactive O2- species.
520 # $a The study of how surface microstructure is affected by silicon processing conditions, obtained through XPS and SR-PES analysis, provides crucial information to the research community and to the silicon industry whose success depends on controlling the state of the silicon surface. Contrary to common understanding, the silicon surface can be kept oxidation-free for an extended period of time. Therefore, the need to clean silicon at the point-of-use has been eliminated.
520 # $a This dissertation also shows that the extent of silicon surface photo-oxidation depends on the surface preparation condition which is determined by the concentration of HF used to hydrogen passivate the surface. Results show that the 250:1HF solution does not as effectively hydrogen passivate the Si(100) surface as does the 50:1HF solution. Comparison of the SR-PES Si(2p) spectra indicates that the 250:1HF prepared surface has a lower density of hydrides than the 50:1HF prepared surface.
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650 # 0 $a Engineering, Materials Science. $3 226940
650 # 0 $a Chemistry, Physical. $3 226924
650 # 0 $a Physics, Condensed Matter. $3 226939
710 0 # $a Stanford University. $3 212607
773 0 # $g 64-05B. $t Dissertation Abstracts International
790 $a 0212
790 1 0 $a Pianetta, Piero, $e advisor
791 $a Ph.D.
792 $a 2003
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