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A micromachined amplifier utilizing ...

Gilbert, Kevin.

A micromachined amplifier utilizing electron tunneling.

Record Type:	Electronic resources : Monograph/item
Title/Author:	A micromachined amplifier utilizing electron tunneling.
Author:	Gilbert, Kevin.
Description:	72 p.
Notes:	Adviser: R. F. W. Pease.
Notes:	Source: Dissertation Abstracts International, Volume: 65-11, Section: B, page: 5924.
Contained By:	Dissertation Abstracts International65-11B.
Subject:	Engineering, Electronics and Electrical.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3153025
ISBN:	0496134701

A micromachined amplifier utilizing electron tunneling.
Gilbert, Kevin.

A micromachined amplifier utilizing electron tunneling. - 72 p.

Adviser: R. F. W. Pease.

Thesis (Ph.D.)--Stanford University, 2005.

For short periods, the MTT achieves AC transconductance per unit current of over 150V-1, as compared with 40V-1 for the BJT. Laser Doppler Vibrometer measurements of the device show that its mechanical resonant frequency (and thus device bandwidth) is greater than 200kHz, the limit of the measurement apparatus. Threshold voltages for the device are less than 25V.

ISBN: 0496134701Subjects--Topical Terms:

226981
Engineering, Electronics and Electrical.

A micromachined amplifier utilizing electron tunneling.
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020 $a 0496134701
035 $a 00197893
040 $a UnM $c UnM
100 0 $a Gilbert, Kevin. $3 237423
245 1 2 $a A micromachined amplifier utilizing electron tunneling.
300 $a 72 p.
500 $a Adviser: R. F. W. Pease.
500 $a Source: Dissertation Abstracts International, Volume: 65-11, Section: B, page: 5924.
502 $a Thesis (Ph.D.)--Stanford University, 2005.
520 # $a For short periods, the MTT achieves AC transconductance per unit current of over 150V-1, as compared with 40V-1 for the BJT. Laser Doppler Vibrometer measurements of the device show that its mechanical resonant frequency (and thus device bandwidth) is greater than 200kHz, the limit of the measurement apparatus. Threshold voltages for the device are less than 25V.
520 # $a Gain is what has made the transistor the primary component of the electronic revolution. The microelectronics champion of gain is the Bipolar Junction Transistor (BJT). The achievable gain using a BJT as measured by device transconductance per unit current is limited to 1/kT, or approximately 40V-1 The rapid growth of microelectromechanical systems (MEMS) in the past several decades has led to many novel devices. The precision dimensional control made possible by MEMS fabrication has been used to create a family of sensors that utilize electron tunneling to achieve high sensitivity. Tunneling sensors have been used to measure acceleration, pressure, and IR radiation, among other phenomena.
520 # $a The most successful devices fabricated at Stanford are dual anchored cantilevers. To achieve lower device threshold voltages and efficient actuation, the initial gap distance of the devices is less than one micron. Through design of the actuation and drain electrodes, the devices are made to be stable over their entire range of travel.
520 # $a The structure of the tunneling transistor is based on an electrostatic micromachined relay. At close drain-source proximities a tunneling current flows through the gap between the relay electrodes. An external circuit senses this tunneling current and applies feedback to the device to stabilize the current flow. A signal provided to the external circuit excites the gate of the device, modulating the width of the tunneling gap and thus the tunneling current. This current carries the amplified signal.
520 # $a This work concerns the Micromechanical Tunneling Transistor (MTT), a novel device that uses electron tunneling to create gain. The MTT is the first device to actively modulate the width of a tunneling barrier to produce electronic gain, using the sensitive relation between tunneling distance and tunneling current.
590 $a School code: 0212.
650 # 0 $a Engineering, Electronics and Electrical. $3 226981
690 $a 0544
710 0 # $a Stanford University. $3 212607
773 0 # $g 65-11B. $t Dissertation Abstracts International
790 $a 0212
790 1 0 $a Pease, R. F. W., $e advisor
791 $a Ph.D.
792 $a 2005
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