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以準分子雷射濺鍍鈦酸鎂鈣(MgCaTiO3)薄膜及應用於MIS光偵測器之...

國立高雄大學電機工程學系碩士班

以準分子雷射濺鍍鈦酸鎂鈣(MgCaTiO3)薄膜及應用於MIS光偵測器之研究 = The research of Photoelectric Properties of the MgCaTiO3 Thin Films Deposited by Excimer Laser Sputtering in a MIS Structure

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The research of Photoelectric Properties of the MgCaTiO3 Thin Films Deposited by Excimer Laser Sputtering in a MIS Structure
作者:	陳聖宗,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	2009[民98]
面頁冊數:	84面圖、表 : 30公分;
標題:	MIS 元件
標題:	MIS Device
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/33697743037492685357
附註:	指導教授：施明昌
附註:	參考書目：面
摘要註:	本論文研究氟化氪(KrF)準分子脈衝雷射濺鍍技術(Pulse Laser Deposition)，沉積鈦酸鎂鈣(MgCaTiO3)高介電陶瓷材料於p-type矽基板上，研究雷射能量對MCT薄膜成長速率之影響，分析MCT薄膜結構及表面粗糙度，並利用掃瞄式電子顯微鏡(SEM)、原子力顯微鏡(AFM)、X光能譜散射儀(EDS)、X光繞射分析儀 (XRD)、拉曼光譜(Raman Spectroscopy)、反射光譜(Reflection Spectrum)、及膜厚掃描儀(Alpha-Step)等材料特性量測，分析準分子脈衝雷射能量對MCT薄膜材料生長之影響及討論，並應用於金屬(Al)-絕緣層(MCT)-半導體(Silicon)MIS元件結構之光偵測器元件製作。研究量測不同波長的光照下電流-電壓、電容-電壓及光響應度之光電特性。 We demonstrate the fabrication of an Al/MgCaTiO3 MIS device which using pulse laser deposition (PLD) to deposit MgCaTiO3 (MCT) thin films on p-type Si (100) substrate. Raman spectroscopy, X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive spectrometer (EDS), and atomic force microscope (AFM) are used to study the effect of the crystalline properties of the deposited films with various process parameters; such as laser fluence and annealing temperature. Transmission / Reflection spectroscopy are used to characterize the optical properties of the deposited MCT films. In addition, I-V and C-V measurements are also used to characterize the dielectric performance and the photo-sensitivity of the MIS device with various thicknesses of the MCT layers.

以準分子雷射濺鍍鈦酸鎂鈣(MgCaTiO3)薄膜及應用於MIS光偵測器之研究 = The research of Photoelectric Properties of the MgCaTiO3 Thin Films Deposited by Excimer Laser Sputtering in a MIS Structure
陳, 聖宗

以準分子雷射濺鍍鈦酸鎂鈣(MgCaTiO3)薄膜及應用於MIS光偵測器之研究 = The research of Photoelectric Properties of the MgCaTiO3 Thin Films Deposited by Excimer Laser Sputtering in a MIS Structure / 陳聖宗撰 - [高雄市] : 撰者, 2009[民98]. - 84面 ; 圖、表 ; 30公分.
指導教授：施明昌參考書目：面.
MIS 元件MIS Device

以準分子雷射濺鍍鈦酸鎂鈣(MgCaTiO3)薄膜及應用於MIS光偵測器之研究 = The research of Photoelectric Properties of the MgCaTiO3 Thin Films Deposited by Excimer Laser Sputtering in a MIS Structure
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330 $a 本論文研究氟化氪(KrF)準分子脈衝雷射濺鍍技術(Pulse Laser Deposition)，沉積鈦酸鎂鈣(MgCaTiO3)高介電陶瓷材料於p-type矽基板上，研究雷射能量對MCT薄膜成長速率之影響，分析MCT薄膜結構及表面粗糙度，並利用掃瞄式電子顯微鏡(SEM)、原子力顯微鏡(AFM)、X光能譜散射儀(EDS)、X光繞射分析儀 (XRD)、拉曼光譜(Raman Spectroscopy)、反射光譜(Reflection Spectrum)、及膜厚掃描儀(Alpha-Step)等材料特性量測，分析準分子脈衝雷射能量對MCT薄膜材料生長之影響及討論，並應用於金屬(Al)-絕緣層(MCT)-半導體(Silicon)MIS元件結構之光偵測器元件製作。研究量測不同波長的光照下電流-電壓、電容-電壓及光響應度之光電特性。 We demonstrate the fabrication of an Al/MgCaTiO3 MIS device which using pulse laser deposition (PLD) to deposit MgCaTiO3 (MCT) thin films on p-type Si (100) substrate. Raman spectroscopy, X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive spectrometer (EDS), and atomic force microscope (AFM) are used to study the effect of the crystalline properties of the deposited films with various process parameters; such as laser fluence and annealing temperature. Transmission / Reflection spectroscopy are used to characterize the optical properties of the deposited MCT films. In addition, I-V and C-V measurements are also used to characterize the dielectric performance and the photo-sensitivity of the MIS device with various thicknesses of the MCT layers.
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