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多接面堆疊式太陽能電池元件的理論模型與計算模擬 = Theoretica...

劉澤

多接面堆疊式太陽能電池元件的理論模型與計算模擬 = Theoretical modeling, simulation, and calculation of multi-junction tandem solar-cell devices

Record Type:	Language materials, printed : monographic
Paralel Title:	Theoretical modeling, simulation, and calculation of multi-junction tandem solar-cell devices
Author:	劉澤,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	民99[2010]
Description:	124面圖，表 : 30公分;
Subject:	多接面堆疊式太陽能電池
Subject:	multi-junction tandem solar-cell
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/13833624033790985650
Summary:	摘要本論文由半導體基本公式出發，推導堆疊式太陽能電池的少數載子及其電流密度的空間分布，並求得元件電壓-電流關係的解析解，並由此理論結果，計算元件參數，如元件尺寸、少數載子生命期，吸收係數，表面複合速率等，對太陽能電池效率之影響。 ABSTRACT The results of the paper derive from the basic formulas of the semiconductor. We calculate the space distribution of the minority carrier density and the current density, showing the relationship between the efficiency and the parameters of the device. The parameters include the size, carrier lifetime, absorption coefficient and surface recombination velocity etc.

多接面堆疊式太陽能電池元件的理論模型與計算模擬 = Theoretical modeling, simulation, and calculation of multi-junction tandem solar-cell devices
劉, 澤

多接面堆疊式太陽能電池元件的理論模型與計算模擬 = Theoretical modeling, simulation, and calculation of multi-junction tandem solar-cell devices / 劉澤撰 - [高雄市] : 撰者, 民99[2010]. - 124面 ; 圖，表 ; 30公分.
參考書目：面.
多接面堆疊式太陽能電池multi-junction tandem solar-cell

多接面堆疊式太陽能電池元件的理論模型與計算模擬 = Theoretical modeling, simulation, and calculation of multi-junction tandem solar-cell devices
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330 $a 摘要本論文由半導體基本公式出發，推導堆疊式太陽能電池的少數載子及其電流密度的空間分布，並求得元件電壓-電流關係的解析解，並由此理論結果，計算元件參數，如元件尺寸、少數載子生命期，吸收係數，表面複合速率等，對太陽能電池效率之影響。 ABSTRACT The results of the paper derive from the basic formulas of the semiconductor. We calculate the space distribution of the minority carrier density and the current density, showing the relationship between the efficiency and the parameters of the device. The parameters include the size, carrier lifetime, absorption coefficient and surface recombination velocity etc.
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