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BSIM4 and MOSFET modeling for IC sim...

Hu, Chenming.

BSIM4 and MOSFET modeling for IC simulation

Record Type:	Electronic resources : Monograph/item
Title/Author:	BSIM4 and MOSFET modeling for IC simulationWeidong Liu, Chenming Hu.
Author:	Liu, Weidong,
other author:	Hu, Chenming.
Published:	Singapore ;World Scientific Pub. Co.,c2011.
Description:	xix, 414 p. :ill. (some col.)
Subject:	Metal oxide semiconductor field-effect transistorsMathematical models.
Online resource:	http://www.worldscientific.com/worldscibooks/10.1142/6158#t=toc
ISBN:	9789812813992 (electronic bk.)

BSIM4 and MOSFET modeling for IC simulation
Liu, Weidong,1965-

BSIM4 and MOSFET modeling for IC simulation[electronic resource] /Weidong Liu, Chenming Hu. - Singapore ;World Scientific Pub. Co.,c2011. - xix, 414 p. :ill. (some col.) - International series on advances in solid state electronics and technology. - International series on advances in solid state electronics and technology..

Includes bibliographical references and index.

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Electronic reproduction.
Singapore :
World Scientific Publishing Co.,
2011.

System requirements: Adobe Acrobat Reader.

ISBN: 9789812813992 (electronic bk.)Subjects--Topical Terms:

184285
Metal oxide semiconductor field-effect transistors
--Mathematical models.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

BSIM4 and MOSFET modeling for IC simulation
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245 1 0 $a BSIM4 and MOSFET modeling for IC simulation $h [electronic resource] / $c Weidong Liu, Chenming Hu.
260 $a Singapore ; $a Hackensack, N.J. : $b World Scientific Pub. Co., $c c2011.
300 $a xix, 414 p. : $b ill. (some col.)
490 1 $a International series on advances in solid state electronics and technology
504 $a Includes bibliographical references and index.
520 $a This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
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650 0 $a Metal oxide semiconductor field-effect transistors $x Mathematical models. $3 184285
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776 1 $z 9812568638
776 1 $z 9789812568632
830 0 $a International series on advances in solid state electronics and technology. $3 575801
856 4 0 $u http://www.worldscientific.com/worldscibooks/10.1142/6158#t=toc