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p型銅銦硒薄膜及含鎳電極之接觸電阻研究 = Studies for th...

國立高雄大學電機工程學系碩士班

p型銅銦硒薄膜及含鎳電極之接觸電阻研究 = Studies for the p-type CIS Film and the Nickel-contained Ohmic Contact Metal

Record Type:	Language materials, printed : monographic
Paralel Title:	Studies for the p-type CIS Film and the Nickel-contained Ohmic Contact Metal
Author:	趙偉民,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2012[民101]
Description:	68面圖，表格 : 30公分;
Subject:	磁控濺鍍
Subject:	sputter
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/09673859332137559443
Notes:	參考書目：面55-58
Summary:	本研究以磁控濺鍍系統生成不同銅/銦厚度比之薄膜，經硒化熱處理生成銅銦硒(CuInSe2, CIS)薄膜。於適當之銅/銦比例時，可形成p型CIS薄膜，載子濃度可達1.0E+17 cm-3。薄膜可藉由後續氬氣熱處理來形成較大之晶粒；但當熱處理溫度超過350℃，薄膜表面開始出現孔洞。並探討不同厚度之鎳/銅與鎳/金層對此CIS薄膜的特徵接觸電阻，完成之特徵接觸電阻最低可達3.4E-4 Ω-cm2。經由整合適當製程參數，製作完成此CIS薄膜於ITO玻璃與FTO玻璃上形成的p-n接面太陽電池，並對其特性做一分析。 In the thesis, p-type CuInSe2 (CIS) film was fabricated by magnetron sputtering Cu/In metals on glass substrate followed by selenization. The hole concentration as 1.0E+17 cm-3 can be achieved. The grain size of the CIS film can be enhanced after the thermal treatment in the Ar atmosphere while the porous surface can be observed as the temperature reached 350 ℃. The metal contact was studied after deposited Ni/Cu and Ni/Au metals with different thickness on the CIS film. The specific contact resistance as 3.4E-4 Ω-cm2 can be achieved. After forming such CIS film on glass/ITO and glass/FTO substrate followed by Ni/Au metal deposition, the p-n junction solar cell can be achieved. The device performance was characterized.

p型銅銦硒薄膜及含鎳電極之接觸電阻研究 = Studies for the p-type CIS Film and the Nickel-contained Ohmic Contact Metal
趙, 偉民

p型銅銦硒薄膜及含鎳電極之接觸電阻研究 = Studies for the p-type CIS Film and the Nickel-contained Ohmic Contact Metal / 趙偉民撰 - [高雄市] : 撰者, 2012[民101]. - 68面 ; 圖，表格 ; 30公分.
參考書目：面55-58.
磁控濺鍍sputter

p型銅銦硒薄膜及含鎳電極之接觸電阻研究 = Studies for the p-type CIS Film and the Nickel-contained Ohmic Contact Metal
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314 $a 指導教授：藍文厚博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本研究以磁控濺鍍系統生成不同銅/銦厚度比之薄膜，經硒化熱處理生成銅銦硒(CuInSe2, CIS)薄膜。於適當之銅/銦比例時，可形成p型CIS薄膜，載子濃度可達1.0E+17 cm-3。薄膜可藉由後續氬氣熱處理來形成較大之晶粒；但當熱處理溫度超過350℃，薄膜表面開始出現孔洞。並探討不同厚度之鎳/銅與鎳/金層對此CIS薄膜的特徵接觸電阻，完成之特徵接觸電阻最低可達3.4E-4 Ω-cm2。經由整合適當製程參數，製作完成此CIS薄膜於ITO玻璃與FTO玻璃上形成的p-n接面太陽電池，並對其特性做一分析。 In the thesis, p-type CuInSe2 (CIS) film was fabricated by magnetron sputtering Cu/In metals on glass substrate followed by selenization. The hole concentration as 1.0E+17 cm-3 can be achieved. The grain size of the CIS film can be enhanced after the thermal treatment in the Ar atmosphere while the porous surface can be observed as the temperature reached 350 ℃. The metal contact was studied after deposited Ni/Cu and Ni/Au metals with different thickness on the CIS film. The specific contact resistance as 3.4E-4 Ω-cm2 can be achieved. After forming such CIS film on glass/ITO and glass/FTO substrate followed by Ni/Au metal deposition, the p-n junction solar cell can be achieved. The device performance was characterized.
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