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紫外光的雷射加工技術應用於砷化鎵晶片切割研究 = UV laser pr...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

紫外光的雷射加工技術應用於砷化鎵晶片切割研究 = UV laser processing technology applied GaAs wafer sawing reserch

Record Type:	Language materials, printed : monographic
Paralel Title:	UV laser processing technology applied GaAs wafer sawing reserch
Author:	謝其良,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	42葉圖，表格 : 30公分;
Subject:	砷化鎵
Subject:	GaAs
Online resource:	https://hdl.handle.net/11296/q2sc7d
Notes:	108年3月25日公開
Notes:	參考書目：葉40-42
Summary:	砷化鎵是一種高硬且脆的材料,在加工中容易晶粒的崩裂,不利於傳統鑽石刀切割加工,雷射加工屬於非接觸式加工，有別於傳統加工過程中所產生刀具磨耗、碎屑等影響，雷射加工具有能量密度高、加工快速、精密度佳、低成本與無污染等優點,因此本論文研究以雷射射在GaAs晶片上加工溝槽的特性，以紫外光雷射波長355um 探討不同雷射工率.頻率.切割速度,並觀察其切割後之表面形貌，配合本論文最佳化之雷射加工模型分析驗證,作為未來應用三五族晶粒切割之可行性。 GaAs wafer is a brittle material, there are problems in traditional diamond sawing such as die cracking, edge chipping and peeling. Therefore it is important to develop an alternative solution of die sawing for GaAs related device packaging. It is known that laser cutting has advantages of high precision and through put. In this thesis we downstate the sawing of GaAs die by UV laser of 355nm. In this experiment, we study laser sawing parameter in term of laser power, vepertion rate and cutting velocity. In addition a simple model of laser cutting is proposed to evaluate the laser cutting efficiency of GaAs wafer. As a conclusion, an optimized laser cutting parameters were achieved and is helpful to apply in GaAs related device package process.

紫外光的雷射加工技術應用於砷化鎵晶片切割研究 = UV laser processing technology applied GaAs wafer sawing reserch
謝, 其良

紫外光的雷射加工技術應用於砷化鎵晶片切割研究 = UV laser processing technology applied GaAs wafer sawing reserch / 謝其良撰 - [高雄市] : 撰者, 2014[民103]. - 42葉 ; 圖，表格 ; 30公分.
108年3月25日公開參考書目：葉40-42.
砷化鎵GaAs

紫外光的雷射加工技術應用於砷化鎵晶片切割研究 = UV laser processing technology applied GaAs wafer sawing reserch
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300 $a 參考書目：葉40-42
314 $a 指導教授：施明昌教授
328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 砷化鎵是一種高硬且脆的材料,在加工中容易晶粒的崩裂,不利於傳統鑽石刀切割加工,雷射加工屬於非接觸式加工，有別於傳統加工過程中所產生刀具磨耗、碎屑等影響，雷射加工具有能量密度高、加工快速、精密度佳、低成本與無污染等優點,因此本論文研究以雷射射在GaAs晶片上加工溝槽的特性，以紫外光雷射波長355um 探討不同雷射工率.頻率.切割速度,並觀察其切割後之表面形貌，配合本論文最佳化之雷射加工模型分析驗證,作為未來應用三五族晶粒切割之可行性。 GaAs wafer is a brittle material, there are problems in traditional diamond sawing such as die cracking, edge chipping and peeling. Therefore it is important to develop an alternative solution of die sawing for GaAs related device packaging. It is known that laser cutting has advantages of high precision and through put. In this thesis we downstate the sawing of GaAs die by UV laser of 355nm. In this experiment, we study laser sawing parameter in term of laser power, vepertion rate and cutting velocity. In addition a simple model of laser cutting is proposed to evaluate the laser cutting efficiency of GaAs wafer. As a conclusion, an optimized laser cutting parameters were achieved and is helpful to apply in GaAs related device package process.
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