國立高雄大學圖資館 |

Language: English

Back

銦、氮摻雜對氧化鋅鈣薄膜載子濃度之研究 = Carrier Concen...

國立高雄大學電機工程學系碩士班

銦、氮摻雜對氧化鋅鈣薄膜載子濃度之研究 = Carrier Concentration Study of In, N Doped CaZnO Thin Film

Record Type:	Language materials, printed : monographic
Paralel Title:	Carrier Concentration Study of In, N Doped CaZnO Thin Film
Author:	王衍文,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2014[民103]
Description:	89面圖，表 : 30公分;
Subject:	噴霧熱裂解法
Subject:	Spray Pyrolysis
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/99970931043724756756
Notes:	參考書目：面77-79
Notes:	103年12月16日公開
Summary:	本論文中，使用噴霧熱裂解法製備氧化鋅鈣薄膜，討論摻雜銦、氮以及銦氮共摻雜對氧化鋅鈣薄膜的影響，並且利用SEM及XRD來分析表面型貌跟結構。根據霍爾測量的結果，氧化鋅鈣摻雜銦會使得薄膜呈現n-type，並且討論以不同的銦作為前驅物的差異。其次氧化鋅鈣摻雜氮會使得薄膜呈現p-type，載子濃度可增加至1x1017cm-3以上。並且在適當的銦氮共摻雜比例下，可以使氧化鋅鈣薄膜的p-type載子濃度提高到1020cm-3。 In the thesis, the doping behavior of calcium zinc oxide prepared by spray pyrolysis with dopant indium, nitrogen and codopant indium-nitrogen were studied. The surface morphology and structure were analysed by SEM and XRD. With Hall measurement, n-type film was fabricated for film with indium doping. Morphology differences were observed for films with different indium precursor. With nitrogen doping, p-type film with concentration above 1x1017 cm-3 can be achieved. The p-type concentration enhancement up to 1020 cm-3 can be observed for calcium zinc oxide film with proper indium and nitrogen codoping procedure.

銦、氮摻雜對氧化鋅鈣薄膜載子濃度之研究 = Carrier Concentration Study of In, N Doped CaZnO Thin Film
王, 衍文

銦、氮摻雜對氧化鋅鈣薄膜載子濃度之研究 = Carrier Concentration Study of In, N Doped CaZnO Thin Film / 王衍文撰 - [高雄市] : 撰者, 2014[民103]. - 89面 ; 圖，表 ; 30公分.
參考書目：面77-79103年12月16日公開.
噴霧熱裂解法Spray Pyrolysis

銦、氮摻雜對氧化鋅鈣薄膜載子濃度之研究 = Carrier Concentration Study of In, N Doped CaZnO Thin Film
LDR:02254nam0a2200289 450 001 430211
005 20170214100520.0
009 430211
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214d2014 k y0chiy05 e
101 1 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a 銦、氮摻雜對氧化鋅鈣薄膜載子濃度之研究 $d Carrier Concentration Study of In, N Doped CaZnO Thin Film $z eng $f 王衍文撰
210 $a [高雄市] $c 撰者 $d 2014[民103]
215 0 $a 89面 $c 圖，表 $d 30公分
300 $a 參考書目：面77-79
300 $a 103年12月16日公開
314 $a 指導教授：藍文厚博士
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 本論文中，使用噴霧熱裂解法製備氧化鋅鈣薄膜，討論摻雜銦、氮以及銦氮共摻雜對氧化鋅鈣薄膜的影響，並且利用SEM及XRD來分析表面型貌跟結構。根據霍爾測量的結果，氧化鋅鈣摻雜銦會使得薄膜呈現n-type，並且討論以不同的銦作為前驅物的差異。其次氧化鋅鈣摻雜氮會使得薄膜呈現p-type，載子濃度可增加至1x1017cm-3以上。並且在適當的銦氮共摻雜比例下，可以使氧化鋅鈣薄膜的p-type載子濃度提高到1020cm-3。 In the thesis, the doping behavior of calcium zinc oxide prepared by spray pyrolysis with dopant indium, nitrogen and codopant indium-nitrogen were studied. The surface morphology and structure were analysed by SEM and XRD. With Hall measurement, n-type film was fabricated for film with indium doping. Morphology differences were observed for films with different indium precursor. With nitrogen doping, p-type film with concentration above 1x1017 cm-3 can be achieved. The p-type concentration enhancement up to 1020 cm-3 can be observed for calcium zinc oxide film with proper indium and nitrogen codoping procedure.
510 1 $a Carrier Concentration Study of In, N Doped CaZnO Thin Film $z eng
610 0 $a 噴霧熱裂解法 $a 氧化鋅鈣 $a 銦氮共摻雜
610 1 $a Spray Pyrolysis $a CaZnO $a In-N codping
681 $a 008M/0019 $b 542201 1020 $v 2007年版
700 1 $a 王 $b 衍文 $4 撰 $3 673427
712 0 2 $a 國立高雄大學 $b 電機工程學系碩士班 $3 166118
801 0 $a tw $b NUK $c 20141021 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/99970931043724756756