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晶圓級封裝產品之晶背研磨參數研究 = Study of Wafer Ba...

國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班

晶圓級封裝產品之晶背研磨參數研究 = Study of Wafer Backside Grinding for WLCSP Product

Record Type:	Language materials, printed : monographic
Paralel Title:	Study of Wafer Backside Grinding for WLCSP Product
Author:	林宣甫,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2015[民104]
Description:	75面圖，表 : 30公分;
Subject:	晶背研磨
Subject:	Wafer Backside Grinding
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/95897755034532545086
Notes:	104年10月31日公開
Notes:	參考書目：面61-62
Summary:	本研究主要配合植球後晶圓特性改變研磨砂輪轉向,並從調整粗磨的段數及進刀速度、細磨轉速、細磨厚度等方式著手,針對晶圓級封裝十二吋晶圓產品進行研磨參數的評估。研究測試過程透過晶粒強度測試,研磨電流負載值觀察,量測晶圓邊緣崩裂、晶背研磨後的粗糙度及晶粒背崩的大小來確認實驗的效果。研究結果顯示,將研磨轉向為逆時鐘方向,粗磨段數調整為四段,細磨轉速降低,及增加細磨厚度,可有效降低晶背粗糙度及晶粒背崩的缺點數量,同時也有助於避免砂輪齒崩裂及晶圓邊緣崩裂的狀況發生。 This thesis is mainly aimed to study grinding wheel rotation, rough grinding steps and feeding speed, fine grinding revolution speed, and fine grinding thickness of backside grinding parameters for wafer level chip scale package (WLCSP) 12 inch wafer, based on the properties of bumped wafer.In the experiment, tend to confirm the effectiveness via die strength test, grinding loading current observation, wafer edge crack, wafer backside roughness, and die backside chipping. The experimental result shows that when implement anti-clockwise grinding rotation, four steps rough grinding, reduce fine grinding rotation speed, and increase fine grinding thickness could effectively reduce roughness and backside chipping defect quantities, then prevent from grinding teeth crack and wafer edge crack as well.

晶圓級封裝產品之晶背研磨參數研究 = Study of Wafer Backside Grinding for WLCSP Product
林, 宣甫

晶圓級封裝產品之晶背研磨參數研究 = Study of Wafer Backside Grinding for WLCSP Product / 林宣甫撰 - [高雄市] : 撰者, 2015[民104]. - 75面 ; 圖，表 ; 30公分.
104年10月31日公開參考書目：面61-62.
晶背研磨Wafer Backside Grinding

晶圓級封裝產品之晶背研磨參數研究 = Study of Wafer Backside Grinding for WLCSP Product
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300 $a 參考書目：面61-62
314 $a 指導教授：藍文厚博士
328 $a 碩士論文--國立高雄大學電機工程學系--先進電子構裝技術產業研發碩士專班
330 $a 本研究主要配合植球後晶圓特性改變研磨砂輪轉向,並從調整粗磨的段數及進刀速度、細磨轉速、細磨厚度等方式著手,針對晶圓級封裝十二吋晶圓產品進行研磨參數的評估。研究測試過程透過晶粒強度測試,研磨電流負載值觀察,量測晶圓邊緣崩裂、晶背研磨後的粗糙度及晶粒背崩的大小來確認實驗的效果。研究結果顯示,將研磨轉向為逆時鐘方向,粗磨段數調整為四段,細磨轉速降低,及增加細磨厚度,可有效降低晶背粗糙度及晶粒背崩的缺點數量,同時也有助於避免砂輪齒崩裂及晶圓邊緣崩裂的狀況發生。 This thesis is mainly aimed to study grinding wheel rotation, rough grinding steps and feeding speed, fine grinding revolution speed, and fine grinding thickness of backside grinding parameters for wafer level chip scale package (WLCSP) 12 inch wafer, based on the properties of bumped wafer.In the experiment, tend to confirm the effectiveness via die strength test, grinding loading current observation, wafer edge crack, wafer backside roughness, and die backside chipping. The experimental result shows that when implement anti-clockwise grinding rotation, four steps rough grinding, reduce fine grinding rotation speed, and increase fine grinding thickness could effectively reduce roughness and backside chipping defect quantities, then prevent from grinding teeth crack and wafer edge crack as well.
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