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氧化鋅壓電層對鎳鐵薄膜磁性調控之研究 = Voltage-control...

國立高雄大學應用物理學系碩士班

氧化鋅壓電層對鎳鐵薄膜磁性調控之研究 = Voltage-control of magnetic properties of NiFe films through a ZnO layer

Record Type:	Language materials, printed : monographic
Paralel Title:	Voltage-control of magnetic properties of NiFe films through a ZnO layer
Author:	柯辛樺,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	國立高雄大學;
Year of Publication:	2015[民104]
Description:	[11]，87面圖，表 : 30公分;
Subject:	氧化鋅
Subject:	ZnO
Online resource:	https://hdl.handle.net/11296/ybz76q
Notes:	109年11月18日公開
Summary:	在此研究中,我們利用射頻磁控濺鍍系統(RF magnetron sputtering system)來製備氧化鋅與鎳鐵薄膜在n-type導電矽基板Si(100)上,形成Ni80Fe20/ZnO/n-typeSi(100)的複合膜結構。利用此結構量測壓電力顯微鏡與磁光柯爾效應來觀察薄膜的壓電性質與磁性質,發現施加一電壓差於氧化鋅薄膜,會使薄膜因為電場產生逆壓電效應來形變,交互作用下引致鎳鐵薄膜層的磁特性產生變化。藉由一連串的磁光柯爾效應量測可得到,鎳鐵薄膜層的柯爾訊號強度與矯頑場Hc均會隨著施加電場的提升而下降,故鎳鐵的磁特性可藉由電場來控制。 In this study, we prepared ZnO and Ni80Fe20 films on highly doped n-type Si(100) using RF magnetron sputtering system. We obtained Ni80Fe20/ZnO/n-typeSi(100) multilayer structures. We observed the piezoelectric properties and magnetic properties of samples using piezoresponse force microscopy and mangeto optical Kerr effect. We applied a voltage on ZnO films. The films would strain by inverse piezoelectric effect. Then, the effect could change magnetic properties of Ni80Fe20 films. The MOKE measurement was executed, while the applied voltage was increased from 0 to 10V. We discovered the Kerr intensity and magnetic coercivity would decrease as applied voltage was increased. So we could control magnetic properties of Ni80Fe20 by electric field.

氧化鋅壓電層對鎳鐵薄膜磁性調控之研究 = Voltage-control of magnetic properties of NiFe films through a ZnO layer
柯, 辛樺

氧化鋅壓電層對鎳鐵薄膜磁性調控之研究 = Voltage-control of magnetic properties of NiFe films through a ZnO layer / 柯辛樺撰 - [高雄市] : 國立高雄大學, 2015[民104]. - [11]，87面 ; 圖，表 ; 30公分.
109年11月18日公開.
參考書目：葉76-77.
氧化鋅ZnO

氧化鋅壓電層對鎳鐵薄膜磁性調控之研究 = Voltage-control of magnetic properties of NiFe films through a ZnO layer
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328 $a 碩士論文--國立高雄大學應用物理學系碩士班
330 $a 在此研究中,我們利用射頻磁控濺鍍系統(RF magnetron sputtering system)來製備氧化鋅與鎳鐵薄膜在n-type導電矽基板Si(100)上,形成Ni80Fe20/ZnO/n-typeSi(100)的複合膜結構。利用此結構量測壓電力顯微鏡與磁光柯爾效應來觀察薄膜的壓電性質與磁性質,發現施加一電壓差於氧化鋅薄膜,會使薄膜因為電場產生逆壓電效應來形變,交互作用下引致鎳鐵薄膜層的磁特性產生變化。藉由一連串的磁光柯爾效應量測可得到,鎳鐵薄膜層的柯爾訊號強度與矯頑場Hc均會隨著施加電場的提升而下降,故鎳鐵的磁特性可藉由電場來控制。 In this study, we prepared ZnO and Ni80Fe20 films on highly doped n-type Si(100) using RF magnetron sputtering system. We obtained Ni80Fe20/ZnO/n-typeSi(100) multilayer structures. We observed the piezoelectric properties and magnetic properties of samples using piezoresponse force microscopy and mangeto optical Kerr effect. We applied a voltage on ZnO films. The films would strain by inverse piezoelectric effect. Then, the effect could change magnetic properties of Ni80Fe20 films. The MOKE measurement was executed, while the applied voltage was increased from 0 to 10V. We discovered the Kerr intensity and magnetic coercivity would decrease as applied voltage was increased. So we could control magnetic properties of Ni80Fe20 by electric field.
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