國立高雄大學圖資館 |

語系: 繁體中文

說明(常見問題)

圖資館首頁

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

N型鰭式場效電晶體之P-N介面特性分析 = The Investigat...

國立高雄大學電機工程學系碩士班

N型鰭式場效電晶體之P-N介面特性分析 = The Investigation of P-N Junction for N-Type FinFETs

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	The Investigation of P-N Junction for N-Type FinFETs
作者:	牟乃寬,
其他團體作者:	國立高雄大學
出版地:	[高雄市]
出版者:	撰者;
出版年:	民104[2015]
面頁冊數:	51面圖，表 : 30公分;
標題:	鰭式場效電晶體
標題:	FinFET
電子資源:	http://handle.ncl.edu.tw/11296/ndltd/60734609321122528657
附註:	105年3月31日公開
摘要註:	鰭式場效電晶體是被認為現今最有可能取代傳統平面場效電晶體的元件之一,本論文中我們就是針對N型三閘極的鰭式元件來做分析。首先在不同尺寸與不同鰭數目下探討基本電性與P-N介面特性,我們發現P-N介面特性經過規一化後,不同鰭數目下IB平均量在鰭數目較多時會下降,另外若固定鰭數目則長度越長IB變化越大。接著分析熱載子效應於N型通道的鰭式場效電晶體P-N介面的可靠度。在熱載子效應下,根據加壓實驗結果看出P-N介面順向偏壓電流變化量會隨著鰭數目增加而遞增。而P-N介面反向電壓漏電流當鰭數目越多時,即是當反向偏壓越大時,會有較大的反向漏電流,且經過加壓實驗後的變化率也較大。反之當鰭數目為1根時可以看出P-N介面對反向漏電流有良好的控制。 FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. The N-type Tri-Gate FinFETs were studied in this work. The characteristics of P-N junction of FinFET devices with different channel lengths and Fin numbers were investigated. It is found that average junction current (IB) will decrease with fin number increasing. On the other hand, the junction current variation increased with channel length increasing as the fin number was fixed. The reliability of N-type FinFETs were then studied with hot carrier stress. It is observed that the variation of forward bias current increased with fin number increasing. Besides, the larger reverse leakage current would be observed with the larger reverse bias and more fin numbers. On the contrite When Fin number is 1 P-N junction can well control reverse bias current leakage from body. In contrast, good controllability of reverse leakage current could be found when fin number is 1.

N型鰭式場效電晶體之P-N介面特性分析 = The Investigation of P-N Junction for N-Type FinFETs
牟, 乃寬

N型鰭式場效電晶體之P-N介面特性分析 = The Investigation of P-N Junction for N-Type FinFETs / 牟乃寬撰 - [高雄市] : 撰者, 民104[2015]. - 51面 ; 圖，表 ; 30公分.
105年3月31日公開.
參考書目：面41-43.
鰭式場效電晶體FinFET

N型鰭式場效電晶體之P-N介面特性分析 = The Investigation of P-N Junction for N-Type FinFETs
LDR:02955nam0a2200289 450 001 472317
005 20170214090242.0
009 472317
010 0 $b 精裝
010 0 $b 平裝
100 $a 20170214d2015 k y0chiy50 e
101 0 $a chi $d chi $d eng
102 $a tw
105 $a ak am 000yy
200 1 $a N型鰭式場效電晶體之P-N介面特性分析 $d The Investigation of P-N Junction for N-Type FinFETs $z eng $f 牟乃寬撰
210 $a [高雄市] $c 撰者 $d 民104[2015]
215 0 $a 51面 $c 圖，表 $d 30公分
300 $a 105年3月31日公開
314 $a 指導教授：葉文冠博士
320 $a 參考書目：面41-43
328 $a 碩士論文--國立高雄大學電機工程學系碩士班
330 $a 鰭式場效電晶體是被認為現今最有可能取代傳統平面場效電晶體的元件之一,本論文中我們就是針對N型三閘極的鰭式元件來做分析。首先在不同尺寸與不同鰭數目下探討基本電性與P-N介面特性,我們發現P-N介面特性經過規一化後,不同鰭數目下IB平均量在鰭數目較多時會下降,另外若固定鰭數目則長度越長IB變化越大。接著分析熱載子效應於N型通道的鰭式場效電晶體P-N介面的可靠度。在熱載子效應下,根據加壓實驗結果看出P-N介面順向偏壓電流變化量會隨著鰭數目增加而遞增。而P-N介面反向電壓漏電流當鰭數目越多時,即是當反向偏壓越大時,會有較大的反向漏電流,且經過加壓實驗後的變化率也較大。反之當鰭數目為1根時可以看出P-N介面對反向漏電流有良好的控制。 FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. The N-type Tri-Gate FinFETs were studied in this work. The characteristics of P-N junction of FinFET devices with different channel lengths and Fin numbers were investigated. It is found that average junction current (IB) will decrease with fin number increasing. On the other hand, the junction current variation increased with channel length increasing as the fin number was fixed. The reliability of N-type FinFETs were then studied with hot carrier stress. It is observed that the variation of forward bias current increased with fin number increasing. Besides, the larger reverse leakage current would be observed with the larger reverse bias and more fin numbers. On the contrite When Fin number is 1 P-N junction can well control reverse bias current leakage from body. In contrast, good controllability of reverse leakage current could be found when fin number is 1.
510 1 $a The Investigation of P-N Junction for N-Type FinFETs $z eng
610 0 $a 鰭式場效電晶體 $a P-N介面特性 $a 熱載子效應
610 1 $a FinFET $a P-N junction characteristic $a hot carrier effect
681 $a 008M/0019 $b 542201 2313 $v 2007年版
700 1 $a 牟 $b 乃寬 $4 撰 $3 727505
712 0 2 $a 國立高雄大學 $b 電機工程學系碩士班 $3 166118
801 0 $a tw $b NUK $c 20160310 $g CCR
856 7 $z 電子資源 $2 http $u http://handle.ncl.edu.tw/11296/ndltd/60734609321122528657