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多重鰭數對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on...

國立高雄大學電機工程學系碩士班

多重鰭數對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Various Fin Numbers

Record Type:	Language materials, printed : monographic
Paralel Title:	Study on Reliability of P-Channel FinFET Devices with Various Fin Numbers
Author:	鄭旭廷,
Secondary Intellectual Responsibility:	國立高雄大學
Place of Publication:	[高雄市]
Published:	撰者;
Year of Publication:	2015[民104]
Description:	82面圖，表 : 30;
Subject:	鰭式場效電晶體
Subject:	FinFET
Online resource:	http://handle.ncl.edu.tw/11296/ndltd/46163590987391078231
Notes:	106年4月25日公開
Notes:	參考書目：面81-82
Summary:	鰭式場效電晶體的出現,取代了傳統平面場效電晶體,在不斷的發展與改良下,從早期雙閘極與三閘極結構到本論文所探討的多重鰭結構,目的是在微縮工程中,追求更好的電性及可靠度。在本研究,我們發現傳統單鰭結構鰭式場效電晶體在電性的表現上明顯優於多重鰭結構。我們更進一步的針對單鰭及多重鰭結構進行負偏壓不穩定度分析,發現多重鰭結構在NBTI 的影響下,元件退化的情形較不明顯。結合R-D(React-Diffusion) model 及power law 時間幂公式可以解釋H 自界面處的游離型式。多重鰭結構受到NBTI 的影響較小。我們認為在通道彼此相當接近下,通道與通道之間會有耦合效應的發生,此現象在單鰭結構中並不會看到,是造成多重鰭結構在元件電性及可靠度上有所差異的重要因素,雖然多重鰭結構無法提供更佳的電性,但可以為我們帶來更佳的元件可靠度。 The traditional planner MOSFET has been replaced under the development of FinFET. In order to achieve better electric characteristics and reliability, the FinFET structures are improved from double gate to tri-gate, and the multi-Fins structure is also utilized. In this work, it is found that single-Fin structure shows better performance than multi-Fins structure. After NBTI stress, the Single-Fin structure device shows the more serious reliability problems. The releasing of H species away from the interface could be explained by connecting R-D model and time power law exponent. Multi-Fins structure shows less impact after NBTI than single-Fin structure device. It is believed that the coupling effect existed in multi-Fins structure due to the closing of channels, which will not be observed in single-Fin structure, will cause the different phenomenon on electric performance and reliability. Although multi-Fin structure will not perform better characteristic, it shows better reliability.

多重鰭數對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Various Fin Numbers
鄭, 旭廷

多重鰭數對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Various Fin Numbers / 鄭旭廷撰 - [高雄市] : 撰者, 2015[民104]. - 82面 ; 圖，表 ; 30.
106年4月25日公開參考書目：面81-82.
鰭式場效電晶體FinFET

多重鰭數對P型鰭式場效電晶體之電性分析及可靠度研究 = Study on Reliability of P-Channel FinFET Devices with Various Fin Numbers
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