國立高雄大學圖資館 |

Language: English

Back

Design and Optimization of GaN-Based...

Colon, Albert.

Design and Optimization of GaN-Based Power Semiconductor Transistors.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Design and Optimization of GaN-Based Power Semiconductor Transistors.
Author:	Colon, Albert.
Published:	Ann Arbor : ProQuest Dissertations & Theses, 2017
Description:	199 p.
Notes:	Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.
Notes:	Adviser: Junxia Shi.
Contained By:	Dissertation Abstracts International78-12B(E).
Subject:	Electrical engineering.
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10644444
ISBN:	9780355176803

Design and Optimization of GaN-Based Power Semiconductor Transistors.
Colon, Albert.

Design and Optimization of GaN-Based Power Semiconductor Transistors. - Ann Arbor : ProQuest Dissertations & Theses, 2017 - 199 p.

Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.

Thesis (Ph.D.)--University of Illinois at Chicago, 2017.

Gallium Nitride, a wide bandgap semiconductor, is a robust material with applications in high-power transistors and power amplifiers. However, processing technology is still maturing and transistors performance are far from theoretical limits. We investigate several design aspects of the heterojunction transistor including ohmic contact, gate insulation and high off-state breakdown. We discuss ohmic contact formation approaches for low contact resistance (Rc) and low temperature processing and achieve Rc less than 0.2 O•mm. For the transistor gate insulation in the Metal-Insulator-Semiconductor Heterojunction, we study many high-kappa dielectrics, deposited by Atomic Layer Deposition, using both TiO2 and HfO2 variations. We also discuss methods towards evaluating interface trap defects at the insulator/GaN interface. Lastly, we cover one method towards improving off-state breakdown voltage for an InAlN/GaN transistor. Various electrical characterization methods are discussed such as pulsed and DC Current-Voltage and Capacitance-Voltage measurements.

ISBN: 9780355176803Subjects--Topical Terms:

454503
Electrical engineering.

Design and Optimization of GaN-Based Power Semiconductor Transistors.
LDR:02001nmm a2200289 4500 001 523957
005 20180517120325.5
008 180709s2017 ||||||||||||||||| ||eng d
020 $a 9780355176803
035 $a (MiAaPQ)AAI10644444
035 $a (MiAaPQ)0799vireo:344Colon
035 $a AAI10644444
040 $a MiAaPQ $c MiAaPQ
100 1 $a Colon, Albert. $3 795465
245 1 0 $a Design and Optimization of GaN-Based Power Semiconductor Transistors.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2017
300 $a 199 p.
500 $a Source: Dissertation Abstracts International, Volume: 78-12(E), Section: B.
500 $a Adviser: Junxia Shi.
502 $a Thesis (Ph.D.)--University of Illinois at Chicago, 2017.
520 $a Gallium Nitride, a wide bandgap semiconductor, is a robust material with applications in high-power transistors and power amplifiers. However, processing technology is still maturing and transistors performance are far from theoretical limits. We investigate several design aspects of the heterojunction transistor including ohmic contact, gate insulation and high off-state breakdown. We discuss ohmic contact formation approaches for low contact resistance (Rc) and low temperature processing and achieve Rc less than 0.2 O•mm. For the transistor gate insulation in the Metal-Insulator-Semiconductor Heterojunction, we study many high-kappa dielectrics, deposited by Atomic Layer Deposition, using both TiO2 and HfO2 variations. We also discuss methods towards evaluating interface trap defects at the insulator/GaN interface. Lastly, we cover one method towards improving off-state breakdown voltage for an InAlN/GaN transistor. Various electrical characterization methods are discussed such as pulsed and DC Current-Voltage and Capacitance-Voltage measurements.
590 $a School code: 0799.
650 4 $a Electrical engineering. $3 454503
690 $a 0544
710 2 $a University of Illinois at Chicago. $b Electrical and Computer Engineering. $3 795466
773 0 $t Dissertation Abstracts International $g 78-12B(E).
790 $a 0799
791 $a Ph.D.
792 $a 2017
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10644444