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Gan single crystal growth and application

Record Type:	Electronic resources : Monograph/item
Title/Author:	Gan single crystal growth and application by Ke Xu ... [et al.].
other author:	Xu, Ke.
Published:	Singapore :Springer Nature Singapore :2025.
Description:	xiv, 304 p. :ill., digital ;24 cm.
Contained By:	Springer Nature eBook
Subject:	Gallium nitride.
Online resource:	https://doi.org/10.1007/978-981-96-7572-2
ISBN:	9789819675722$q(electronic bk.)

Gan single crystal growth and application
Gan single crystal growth and application [electronic resource] /by Ke Xu ... [et al.]. - Singapore :Springer Nature Singapore :2025. - xiv, 304 p. :ill., digital ;24 cm. - Wide bandgap semiconductors,2948-2615. - Wide bandgap semiconductors..

Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.

Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points.

ISBN: 9789819675722$q(electronic bk.)

Standard No.: 10.1007/978-981-96-7572-2doiSubjects--Topical Terms:

210966
Gallium nitride.

LC Class. No.: TK7871.15.G33

Dewey Class. No.: 621.38152

Gan single crystal growth and application
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245 0 0 $a Gan single crystal growth and application $h [electronic resource] / $c by Ke Xu ... [et al.].
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2025.
300 $a xiv, 304 p. : $b ill., digital ; $c 24 cm.
490 1 $a Wide bandgap semiconductors, $x 2948-2615
505 0 $a Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices.
520 $a Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make readers more thoughtful and generate positive innovation points.
650 0 $a Gallium nitride. $3 210966
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650 1 4 $a Materials for Devices. $3 918939
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 274412
650 2 4 $a Microwaves, RF Engineering and Optical Communications. $3 913287
700 1 $a Xu, Ke. $3 674758
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830 0 $a Wide bandgap semiconductors. $3 993271
856 4 0 $u https://doi.org/10.1007/978-981-96-7572-2
950 $a Physics and Astronomy (SpringerNature-11651)