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Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /T. Andrew Bowen.
作者:	Bowen, T. Andrew,
面頁冊數:	1 electronic resource (189 pages)
附註:	Source: Dissertations Abstracts International, Volume: 87-04, Section: B.
附註:	Advisors: Robinson, Joshua Committee members: Mauro, John; Maria, Jon-Paul; Terrones, Mauricio; Law, Stephanie; Wetherington, Maxwell.
Contained By:	Dissertations Abstracts International87-04B.
標題:	Furnaces.
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=32289484
ISBN:	9798297666931

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /
Bowen, T. Andrew,

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /T. Andrew Bowen. - 1 electronic resource (189 pages)

Source: Dissertations Abstracts International, Volume: 87-04, Section: B.

Two-dimensional (2D) materials, characterized by their layered structure and unique electronic and optical properties, have emerged as promising candidates for next-generation optoelectronic and quantum devices. Among them, transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS₂), and two-dimensional metals exhibit extraordinary physical characteristics that can be harnessed for tunable electronic and optical applications. This thesis investigates novel synthesis approaches, intercalation strategies, and the integration of 2D materials to enhance their functionalities.The study introduces an innovative approach to synthesizing high-quality 2D MoS₂ films using solid-source chemical vapor deposition (SS-CVD) and metal-organic chemical vapor deposition (MOCVD). These techniques enable precise control over growth parameters, resulting in monolayer MoS₂ with minimal defects and high crystallinity. Additionally, the effects of rare-earth element doping on MoS₂ were explored to modify its optoelectronic properties. However, experimental findings reveal that cerium doping primarily influences surface morphology rather than achieving uniform lattice incorporation, highlighting the complexities of rare-earth doping in 2D materials.Beyond synthesis, this research addresses the challenge of achieving uniform, large-area intercalation of metals into epitaxial graphene (EG) to create stable 2D metal heterostructures. Confinement Heteroepitaxy (CHet) was employed to intercalate gallium and indium beneath graphene layers, significantly enhancing their optical and plasmonic properties. A novel tungsten foil-assisted CHet method was developed to mitigate gallium droplet formation during intercalation, ensuring a more uniform and reproducible process. Furthermore, an alternative sub-monolayer epitaxial graphene (sMEG) approach was introduced, demonstrating a pathway to atomically smooth surfaces, which are crucial for high-performance heterostructures.Environmental factors influencing graphene synthesis were also explored, revealing the impact of substrate morphology, hydrogen etching conditions, and chamber contamination on the quality of epitaxial graphene. Investigations into alternative etch chemistries for defect engineering confirmed the effectiveness of oxygen plasma while highlighting the potential of modified plasma treatments to optimize defect formation without compromising graphene's structural integrity.The findings of this research pave the way for scalable, high-quality synthesis of 2D materials, precise intercalation techniques, and tunable electronic and optical properties for advanced technological applications. By refining growth methods, optimizing intercalation processes, and leveraging defect engineering strategies, this work contributes to the broader integration of 2D materials into semiconductor, optoelectronic, and quantum computing technologies.

English

ISBN: 9798297666931Subjects--Topical Terms:

663642
Furnaces.

Synthesis and Properties of 2-d Metal/semiconductor Heterostructure Components /
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