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Practical terahertz electronics :devices and applications.Volume 1,Solid-state devices and vacuum tubes. /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Practical terahertz electronics :Vinod Kumar Khanna.
Reminder of title:	devices and applications.
Author:	Khanna, Vinod Kumar,
Published:	Bristol, UK :IOP Publishing,c2021.
Description:	1 volume (various paging) :ill. (chiefly col.) ;27 cm.
Subject:	Solid state electronics.
ISBN:	9780750331692 :

Practical terahertz electronics :devices and applications.Volume 1,Solid-state devices and vacuum tubes. /
Khanna, Vinod Kumar,

Practical terahertz electronics :devices and applications.Volume 1,Solid-state devices and vacuum tubes. /Vinod Kumar Khanna. - 1st ed. - Bristol, UK :IOP Publishing,c2021. - 1 volume (various paging) :ill. (chiefly col.) ;27 cm. - IOP ebooks series . - IOP ebooks series..

Includes bibliographical references.

Intro -- Preface -- Acknowledgements -- Author biography -- Vinod Kumar Khanna -- Introduction -- Academic qualifications -- Work experience and accomplishments -- Semiconductor facility creation and maintenance -- Scientific positions held -- Membership of professional societies -- Foreign travel -- Scholarships and awards -- Research publications and books -- About the Book -- Abbreviations and acronyms -- Chemical symbols -- Mathematical notation -- Greek alphabet -- Chapter 1 Terahertz electromagnetic waves -- 1.1 What are terahertz waves? -- 1.2 The electromagnetic waves -- 1.2.1 Production of electromagnetic waves -- 1.2.2 Oscillating charges as sources of electromagnetic waves -- 1.2.3 Far-field and near-field interactions -- 1.2.4 Wave properties of electromagnetic waves -- 1.2.5 Particle properties of electromagnetic waves -- 1.3 Subdivisions of electromagnetic waves according to frequencies: the electromagnetic spectrum -- 1.4 Location of terahertz gap in the international standard band designations -- 1.5 Terahertz electronics -- 1.6 The practical perspective of electronics -- 1.7 Moving from conventional to terahertz electronics -- 1.7.1 THz generation -- 1.7.2 THz amplification -- 1.7.3 THz modulation -- 1.7.4 THz demodulation/THz detection -- 1.7.5 Frequency multiplication for terahertz generation -- 1.7.6 Frequency mixing for shifting signal frequency from one range to another -- 1.8 Peculiarities of the terahertz gap -- 1.9 Unique advantages of terahertz gap frequencies -- 1.10 Organizational plan of the book -- 1.11 Discussion and conclusions -- References -- Chapter 2 Schottky barrier, metal-insulator-metal, self-switching and geometric diodes -- 2.1 Schottky diode principle and switching action -- 2.1.1 Working principle of the Schottky diode -- 2.1.2 Competition between Schottky barrier diode (SBD) and P-N junction diode.

This research and reference text provides a comprehensive and authoritative survey of the state-of-the-art in terahertz electronics research. Volume one focuses on solid-state devices and vacuum tubes. Intended for researchers and professionals in the field, the text is an essential reference for anyone working at the cutting edge of terahertz electronics.

ISBN: 9780750331692 :NT$5991Subjects--Topical Terms:

181944
Solid state electronics.

LC Class. No.: TK7871.85 / K455 2021

Dewey Class. No.: 621.381

Practical terahertz electronics :devices and applications.Volume 1,Solid-state devices and vacuum tubes. /
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245 1 0 $a Practical terahertz electronics : $b devices and applications. $n Volume 1, $p Solid-state devices and vacuum tubes. / $c Vinod Kumar Khanna.
250 $a 1st ed.
260 $a Bristol, UK : $b IOP Publishing, $c c2021.
300 $a 1 volume (various paging) : $b ill. (chiefly col.) ; $c 27 cm.
490 1 $a IOP ebooks series
504 $a Includes bibliographical references.
505 0 $a Intro -- Preface -- Acknowledgements -- Author biography -- Vinod Kumar Khanna -- Introduction -- Academic qualifications -- Work experience and accomplishments -- Semiconductor facility creation and maintenance -- Scientific positions held -- Membership of professional societies -- Foreign travel -- Scholarships and awards -- Research publications and books -- About the Book -- Abbreviations and acronyms -- Chemical symbols -- Mathematical notation -- Greek alphabet -- Chapter 1 Terahertz electromagnetic waves -- 1.1 What are terahertz waves? -- 1.2 The electromagnetic waves -- 1.2.1 Production of electromagnetic waves -- 1.2.2 Oscillating charges as sources of electromagnetic waves -- 1.2.3 Far-field and near-field interactions -- 1.2.4 Wave properties of electromagnetic waves -- 1.2.5 Particle properties of electromagnetic waves -- 1.3 Subdivisions of electromagnetic waves according to frequencies: the electromagnetic spectrum -- 1.4 Location of terahertz gap in the international standard band designations -- 1.5 Terahertz electronics -- 1.6 The practical perspective of electronics -- 1.7 Moving from conventional to terahertz electronics -- 1.7.1 THz generation -- 1.7.2 THz amplification -- 1.7.3 THz modulation -- 1.7.4 THz demodulation/THz detection -- 1.7.5 Frequency multiplication for terahertz generation -- 1.7.6 Frequency mixing for shifting signal frequency from one range to another -- 1.8 Peculiarities of the terahertz gap -- 1.9 Unique advantages of terahertz gap frequencies -- 1.10 Organizational plan of the book -- 1.11 Discussion and conclusions -- References -- Chapter 2 Schottky barrier, metal-insulator-metal, self-switching and geometric diodes -- 2.1 Schottky diode principle and switching action -- 2.1.1 Working principle of the Schottky diode -- 2.1.2 Competition between Schottky barrier diode (SBD) and P-N junction diode.
505 8 $a 2.2 Current-voltage equation of a non-ideal Schottky-barrier diode (SBD) -- 2.3 Components of the traditional equivalent circuit of a Schottky-barrier diode -- 2.3.1 Series resistance (RS) of the SBD -- 2.3.2 Dynamic resistance (rd) of the SBD -- 2.3.3 Junction capacitance (Cj) of the SBD -- 2.4 Cut-off frequency of the circular-contact SBD -- Example 2.1 -- Example 2.3 -- 2.5 Consideration of skin effect for series resistance calculation -- Example 2.4 -- 2.6 Range of applicability of traditional SBD model -- 2.7 Extended model of SBD -- 2.8 Schottky diodes with terahertz operational frequencies -- 2.8.1 High-frequency performance degrading factors -- 2.8.2 Terahertz Schottky barrier diodes -- 2.8.3 Schottky diodes in terahertz detection -- 2.8.4 Terahertz sources utilizing Schottky diode frequency-multiplier chains -- 2.8.5 Frequency mixing using Schottky diodes -- 2.9 Non-PN junction diodes -- 2.9.1 Metal-insulator-metal (MIM) diode -- 2.9.2 Self-switching diode (SSD) -- 2.9.3 Geometric diode -- Example 2.5 -- Example 2.7 -- 2.10 Discussion and conclusions -- References -- Chapter 3 Resonant tunneling diodes -- 3.1 Resonant tunneling diode working and high-frequency capability -- 3.1.1 Structure and operation of the resonant tunneling diode -- 3.1.2 Reason for high switching speed of resonant tunneling diode -- 3.2 Simplest equivalent circuit model of resonant tunneling diode -- 3.2.1 Oscillation frequency formula -- 3.2.2 Maximum oscillation frequency formula -- 3.3 Maximum output power conveyed to the load resistor RL -- 3.4 Small-signal transit-time equivalent circuit model of RTD -- 3.5 Physics-based small-signal equivalent circuit model -- 3.6 Terahertz resonant tunneling diodes -- 3.7 Discussion and conclusions -- References -- Chapter 4 Avalanche transit-time and transferred-electron diodes.
505 8 $a 4.1 Mechanisms of creation of negative resistance -- 4.1.1 Avalanche transit time effect -- 4.1.2 Transferred electron effect -- 4.2 Frequency and power capabilities of IMPATT diode -- 4.3 Diode structure and dynamic negative resistance behavior -- 4.3.1 Diode operation as a combination of avalanche and transit time effects -- 4.3.2 Resonant frequency and power formulae -- 4.4 Terahertz GaAs IMPATT diodes -- 4.5 Transferred-electron diode -- 4.5.1 Operational frequency of Gunn diode -- 4.5.2 Why is a Gunn diode called a 'diode'? -- 4.6 Physics of Gunn diode operation -- 4.6.1 The Gunn effect -- 4.6.2 Electron transfer mechanism and negative differential resistance -- 4.6.3 Current oscillations arising from NDR -- 4.6.4 Explanation of current oscillations from the perspective of Gunn domain formation -- 4.7 Terahertz planar Gunn diodes -- 4.7.1 GaAs Gunn diodes -- 4.7.2 InGaAs Gunn diodes -- 4.8 Discussion and conclusions -- References -- Chapter 5 Heterojunction bipolar transistors -- 5.1 Capability of heterojunction bipolar transistor to work at high frequencies -- 5.1.1 Homojunction and heterojunction bipolar transistors -- 5.1.2 Homojunction versus heterojunction bipolar transistor -- 5.2 Gain definitions -- 5.2.1 Large-signal common-emitter current gains (βDC or hFE) -- 5.2.2 Small-signal common-emitter current gains (βAC or hfe) -- 5.2.3 Unilateral power gain (U) -- 5.3 Frequency response of the common-emitter transistor amplifier -- 5.4 Figures of merit (FOMs) for high-frequency bipolar transistors -- 5.4.1 Cut-off frequency (fT) of the transistor -- 5.4.2 Maximum frequency of oscillation (fMax) of the transistor -- 5.5 Correlation of terms in cut-off frequency equation with components of equivalent circuit of the bipolar transistor -- 5.5.1 Meaning of the first term in the denominator of fT equation.
505 8 $a 5.5.2 Meaning of the second term in the denominator of fT equation -- 5.5.3 Meaning of the third term in the denominator of fT equation -- 5.5.4 Meaning of the fourth term in the denominator of fT equation -- 5.5.5 Overall meaning of the fT equation -- 5.6 DHBT IC technologies -- 5.6.1 250 nm InP DHBT IC technology -- 5.6.2 130 nm InP DHBT IC technology -- 5.7 Discussion and conclusions -- References -- Chapter 6 Metal-oxide semiconductor field-effect transistors -- 6.1 MOSFET construction and operation -- 6.2 Short-circuit current gain -- 6.3 MOSFET capacitances -- 6.3.1 Gate-to-channel capacitance -- 6.3.2 Gate-source and gate-drain capacitances -- 6.4 Cut-off frequency -- 6.4.1 The cut-off frequency formula -- 6.4.2 Physical meaning of cut-off frequency formula -- 6.5 Circumventing the MOSFET speed limitations due to long electron transit time -- 6.5.1 Resonant cavity -- 6.5.2 Standing waves -- 6.5.3 Stationary wave formation in a medium under different boundary conditions -- 6.5.4 Excitation of plasma waves in an FET channel -- 6.5.5 Determination of wavelength of plasma waves -- 6.5.6 Determination of velocity of plasma waves -- 6.5.7 Determination of frequency of plasma waves -- 6.6 Terahertz MOSFET detectors -- 6.6.1 TeraFET -- 6.6.2 Dual-frequency CMOS terahertz detector -- 6.7 Discussion and conclusions -- References -- Chapter 7 High-electron-mobility transistors -- 7.1 MESFET and HEMT basics -- 7.1.1 The MESFET -- 7.1.2 The HEMT -- 7.1.3 Superiority of HEMT over MESFET -- 7.2 HEMT operation at high frequencies -- 7.2.1 High-frequency model of HEMT -- 7.2.2 Minimization of delay components in HEMT -- 7.3 Built-in potential and capacitances -- 7.3.1 Built-in potential of the gate electrode/semiconductor junction of HEMT -- 7.3.2 Junction capacitances -- 7.4 Analysis of an HEMT structure -- 7.5 InP terahertz HEMT technology.
505 8 $a 7.5.1 Reasons for interest in InP HEMTs -- 7.5.2 High-frequency HEMT amplifiers -- 7.5.3 HEMT terahertz emitters -- 7.6 Discussion and conclusions -- References -- Chapter 8 Travelling wave tubes and backward wave oscillators -- 8.1 General constructional features of TWTs and BWOs -- 8.1.1 Main components -- 8.1.2 Problems faced with pencil-beams -- 8.1.3 Performance improvement with planar sheet beams -- 8.1.4 Functions of electric and magnetic fields -- 8.1.5 Function of the slow wave structure -- 8.1.6 Constructional dissimilarities/similarities between TWT and BWO -- 8.2 Closer examination of working of TWT/BWO -- 8.2.1 Phase velocity (vp) and group velocity (vg) concepts -- 8.2.2 Phase and group velocities in a waveguide -- 8.2.3 Reduction of the phase velocity of electromagnetic waves by a slow wave structure -- 8.2.4 Floquet's theorem and electric field distribution in the slow-wave structure -- 8.2.5 Emission of Cherenkov radiation -- Example 8.1 Interpretation of imaginary wavenumber -- 8.3 Difference between a travelling wave tube and backward wave oscillator from phase/group velocity viewpoint -- 8.4 Electron bunching and amplification of the signal in a TWT -- 8.5 Applications of TWTs -- 8.6 Terahertz TWTs -- 8.7 Operation of the backward wave oscillator -- 8.8 Advantages of the backward wave oscillator -- 8.9 Limitations of the backward wave oscillator -- 8.10 Frequency/power levels achieved with backward wave oscillators -- 8.11 Discussion and conclusions -- References -- Chapter 9 Gyrotrons -- 9.1 Difficulties faced with classical electron tubes in the terahertz range -- 9.2 Periodic beam devices versus periodic circuit devices -- 9.3 Advantages offered by gyrotron for terahertz generation -- 9.4 Components and constructional details of gyrotron -- 9.4.1 Magnetron injection gun (MIG) -- 9.4.2 Beam tunnel -- 9.4.3 The resonant cavity.
505 8 $a 9.4.4 Electromagnetic wave output and electron beam collection system.
520 $a This research and reference text provides a comprehensive and authoritative survey of the state-of-the-art in terahertz electronics research. Volume one focuses on solid-state devices and vacuum tubes. Intended for researchers and professionals in the field, the text is an essential reference for anyone working at the cutting edge of terahertz electronics.
650 0 $a Solid state electronics. $3 181944
830 0 $a IOP ebooks series. $3 1011745