Metal oxide semiconductor field-effect transistors.

Bias temperature instability for devices and circuits by: (Electronic resources)

MOSFET technologies for double-pole four-throw radio-frequency switch by: (Electronic resources)

Fundamentals of bias temperature instability in MOS transistorscharacterization methods, process and materials impact, DC and AC modeling / by: (Electronic resources)

The source/drain engineering of nanoscale Germanium-based MOS devices by: (Electronic resources)

Carrier transport in nanoscale MOS transistors by: (Electronic resources)

Growth of high permittivity dielectrics by high pressure sputtering from metallic targets by: (Electronic resources)

Fundamentals of ultra-thin-body MOSFETs and FinFETs / by: (Language materials, printed)

Spacer engineered FinFET architectures :high-performance digital circuit applications / by: (Language materials, printed)

MOS devices for low-voltage and low-energy applications / by: (Language materials, printed)

CMOS circuit design, layout, and simulation / by: (Language materials, printed)

Model and design of improved current mode logic gatesdifferential and single-ended / by: (Electronic resources)

Charge transport in low dimensional semiconductor structuresthe maximum entropy approach / by: (Electronic resources)

Circadian rhythms for future resilient electronic systemsaccelerated active self-healing for integrated circuits / by: (Electronic resources)

High-k gate dielectric materials :applications with advanced metal oxide semiconductor field effect transistors (MOSFETs) / by: (Language materials, printed)

Differentiated layout styles for MOSFETselectrical behavior in harsh environments / by: (Electronic resources)

Multigate transistors for high frequency applications by: (Electronic resources)